MTE05N08E3 Specs and Replacement

Type Designator: MTE05N08E3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 333 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 702 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: TO-220AB

MTE05N08E3 substitution

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MTE05N08E3 datasheet

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MTE05N08E3

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MTE05N08E3

Spec. No. C928E3 Issued Date 2013.11.04 CYStech Electronics Corp. Revised Date 2013.11.12 Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTE05N10E3 ID 140A 5.9m RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 6.2m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Charact... See More ⇒

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MTE05N08E3

Spec. No. C928FP Issued Date 2015.03.16 CYStech Electronics Corp. Revised Date Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTE05N10FP ID @ VGS=10V, TC=25 C 109A 5.9m RDSON(TYP) @ VGS=10V, ID=20A 6.2m RDSON(TYP) @ VGS=7V, ID=20A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Ch... See More ⇒

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 mte050n15brv8.pdf pdf_icon

MTE05N08E3

Spec. No. C033V8 Issued Date 2017.10.05 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTE050N15BRV8 BVDSS 150V ID @ TC=25 C, VGS=10V 12.4A ID @ TA=25 C, VGS=10V 4.3A 49.1m VGS=10V, ID=3.4A Features RDSON(TYP) 58.5m VGS=6V, ID=3.3A Single Drive Requirement Low On-resistance Fast Switchi... See More ⇒

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Detailed specifications: MTDNK2N6, MTDP2004S6R, MTDP4953BDYQ8, MTDP4953Q8, MTDP9620T8, MTE010N10E3, MTE010N10FP, MTE040N20P3, SI2302, MTE05N10E3, MTE130N20FP, MTE130N20KE3, MTE130N20KF3, MTE130N20KFP, MTE130N20KJ3, MTE13N08J3, MTE1K0P15KN3

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