MTE65N15FP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTE65N15FP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 117 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: TO-220FP

Búsqueda de reemplazo de MOSFET MTE65N15FP

MTE65N15FP Datasheet (PDF)

..1. Size:344K cystek
mte65n15fp.pdf

Spec. No. : C873FP Issued Date : 2012.11.16 CYStech Electronics Corp.Revised Date : 2013.05.24 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS 150VMTE65N15FP ID 15ARDS(ON)@VGS=10V, ID=15A 55 m(typ) RDS(ON)@VGS=6V, ID=10A 61m(typ) Description The MTE65N15FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fas

6.1. Size:310K cystek
mte65n15j3.pdf

Spec. No. : C873J3 Issued Date : 2012.12.18 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 150VMTE65N15J3 ID 20ARDS(ON)@VGS=10V, ID=15A 55 m(typ) RDS(ON)@VGS=6V, ID=10A 61m(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic

8.1. Size:587K 1
mte65n20h8.pdf

Spec. No. : C872H8 Issued Date : 2016.02.01 CYStech Electronics Corp. Revised Date : 2016.07.12 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20H8ID @VGS=10V, TC=25C 24A RDSON(TYP) VGS=10V, ID=11A 61m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-fre

8.2. Size:304K cystek
mte65n20j3.pdf

Spec. No. : C872J3 Issued Date : 2012.10.25 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20J3 ID 25A61m VGS=10V, ID=11A RDSON(TYP) 66m VGS=6V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit Ou

8.3. Size:282K cystek
mte65n20f3.pdf

Spec. No. : C872F3 Issued Date : 2012.12.26 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20F3 ID 33A61m VGS=10V, ID=11A RDSON(TYP) 66m VGS=6V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTE65N20F3 TO-263

8.4. Size:587K cystek
mte65n20h8.pdf