MTE65N15FP
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTE65N15FP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 20
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 117
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
TO-220FP
MTE65N15FP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTE65N15FP
Datasheet (PDF)
..1. Size:344K cystek
mte65n15fp.pdf
Spec. No. : C873FP Issued Date : 2012.11.16 CYStech Electronics Corp.Revised Date : 2013.05.24 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS 150VMTE65N15FP ID 15ARDS(ON)@VGS=10V, ID=15A 55 m(typ) RDS(ON)@VGS=6V, ID=10A 61m(typ) Description The MTE65N15FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fas
6.1. Size:310K cystek
mte65n15j3.pdf
Spec. No. : C873J3 Issued Date : 2012.12.18 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 150VMTE65N15J3 ID 20ARDS(ON)@VGS=10V, ID=15A 55 m(typ) RDS(ON)@VGS=6V, ID=10A 61m(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic
8.1. Size:587K 1
mte65n20h8.pdf
Spec. No. : C872H8 Issued Date : 2016.02.01 CYStech Electronics Corp. Revised Date : 2016.07.12 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20H8ID @VGS=10V, TC=25C 24A RDSON(TYP) VGS=10V, ID=11A 61m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-fre
8.2. Size:304K cystek
mte65n20j3.pdf
Spec. No. : C872J3 Issued Date : 2012.10.25 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20J3 ID 25A61m VGS=10V, ID=11A RDSON(TYP) 66m VGS=6V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit Ou
8.3. Size:282K cystek
mte65n20f3.pdf
Spec. No. : C872F3 Issued Date : 2012.12.26 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20F3 ID 33A61m VGS=10V, ID=11A RDSON(TYP) 66m VGS=6V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTE65N20F3 TO-263
8.4. Size:587K cystek
mte65n20h8.pdf
Spec. No. : C872H8 Issued Date : 2016.02.01 CYStech Electronics Corp. Revised Date : 2016.07.12 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20H8ID @VGS=10V, TC=25C 24A RDSON(TYP) VGS=10V, ID=11A 61m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-fre
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