MTN1322S3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTN1322S3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.35 W
Voltaje máximo drenador - fuente |Vds|: 25 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 0.85 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.6 V
Carga de la puerta (Qg): 1.3 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 14 pF
Resistencia entre drenaje y fuente RDS(on): 0.3 Ohm
Paquete / Cubierta: SOT-323
Búsqueda de reemplazo de MOSFET MTN1322S3
MTN1322S3 Datasheet (PDF)
mtn1322s3.pdf
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Spec. No. : C596S3 Issued Date : 2009.11.20 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 25VMTN1322S3 ID 850mARDSON@VGS=4.5V, ID=600mA 300m(typ) RDSON@VGS=2.5V,ID=400mA 450m(typ) RDSON@VGS=1.8V,ID=350mA 870m(typ) Features Simple drive requirement Small package outline Pb-free packag
mtn138ks3.pdf
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Spec. No. : C320S3 Issued Date : 2007.11.06 CYStech Electronics Corp.Revised Date : 2013.09.03 Page No. : 1/7 N-CHANNEL MOSFET MTN138KS3 Description The MTN138KS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive Easily designed drive circuits Easy to use in parallel Pb-
mtn13n50e3.pdf
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Spec. No. : C405E3 Issued Date : 2008.12.01 CYStech Electronics Corp.Revised Date : 2009.08.13 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.48 MTN13N50E3 ID : 13A Description The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resis
mtn1308e3.pdf
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Spec. No. : C440E3 Issued Date : 2009.02.23 CYStech Electronics Corp.Revised Date : Page No. : 1/6 N-Channel Enhancement Mode Power MOSFETBVDSS 75VRDSON 13 m MTN1308E3 ID 80ADescription The MTN1308E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effective
mtn138zn3.pdf
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Spec. No. : C388N3 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date :2014.06.10 Page No. : 1/9 N-CHANNEL MOSFET MTN138ZN3 Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free lead plating and halogen-free package Symbol Outline MTN1
mtn13n50fp.pdf
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Spec. No. : C405FP Issued Date : 2008.12.01 CYStech Electronics Corp.Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.48 typ. MTN13N50FP ID : 13A Description The MTN13N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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