All MOSFET. MTN1322S3 Datasheet

 

MTN1322S3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTN1322S3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 0.85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.3 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT-323

 MTN1322S3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTN1322S3 Datasheet (PDF)

 ..1. Size:309K  cystek
 mtn1322s3.pdf

MTN1322S3 MTN1322S3

Spec. No. : C596S3 Issued Date : 2009.11.20 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 25VMTN1322S3 ID 850mARDSON@VGS=4.5V, ID=600mA 300m(typ) RDSON@VGS=2.5V,ID=400mA 450m(typ) RDSON@VGS=1.8V,ID=350mA 870m(typ) Features Simple drive requirement Small package outline Pb-free packag

 9.1. Size:274K  cystek
 mtn138ks3.pdf

MTN1322S3 MTN1322S3

Spec. No. : C320S3 Issued Date : 2007.11.06 CYStech Electronics Corp.Revised Date : 2013.09.03 Page No. : 1/7 N-CHANNEL MOSFET MTN138KS3 Description The MTN138KS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive Easily designed drive circuits Easy to use in parallel Pb-

 9.2. Size:508K  cystek
 mtn13n50e3.pdf

MTN1322S3 MTN1322S3

Spec. No. : C405E3 Issued Date : 2008.12.01 CYStech Electronics Corp.Revised Date : 2009.08.13 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.48 MTN13N50E3 ID : 13A Description The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resis

 9.3. Size:203K  cystek
 mtn1308e3.pdf

MTN1322S3 MTN1322S3

Spec. No. : C440E3 Issued Date : 2009.02.23 CYStech Electronics Corp.Revised Date : Page No. : 1/6 N-Channel Enhancement Mode Power MOSFETBVDSS 75VRDSON 13 m MTN1308E3 ID 80ADescription The MTN1308E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effective

 9.4. Size:326K  cystek
 mtn138zn3.pdf

MTN1322S3 MTN1322S3

Spec. No. : C388N3 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date :2014.06.10 Page No. : 1/9 N-CHANNEL MOSFET MTN138ZN3 Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free lead plating and halogen-free package Symbol Outline MTN1

 9.5. Size:338K  cystek
 mtn13n50fp.pdf

MTN1322S3 MTN1322S3

Spec. No. : C405FP Issued Date : 2008.12.01 CYStech Electronics Corp.Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.48 typ. MTN13N50FP ID : 13A Description The MTN13N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2N7228

 

 
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