MTN1322S3 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MTN1322S3
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.85 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 14 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
Тип корпуса: SOT-323
Аналог (замена) для MTN1322S3
MTN1322S3 Datasheet (PDF)
mtn1322s3.pdf

Spec. No. : C596S3 Issued Date : 2009.11.20 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 25VMTN1322S3 ID 850mARDSON@VGS=4.5V, ID=600mA 300m(typ) RDSON@VGS=2.5V,ID=400mA 450m(typ) RDSON@VGS=1.8V,ID=350mA 870m(typ) Features Simple drive requirement Small package outline Pb-free packag
mtn138ks3.pdf

Spec. No. : C320S3 Issued Date : 2007.11.06 CYStech Electronics Corp.Revised Date : 2013.09.03 Page No. : 1/7 N-CHANNEL MOSFET MTN138KS3 Description The MTN138KS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive Easily designed drive circuits Easy to use in parallel Pb-
mtn13n50e3.pdf

Spec. No. : C405E3 Issued Date : 2008.12.01 CYStech Electronics Corp.Revised Date : 2009.08.13 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.48 MTN13N50E3 ID : 13A Description The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resis
mtn1308e3.pdf

Spec. No. : C440E3 Issued Date : 2009.02.23 CYStech Electronics Corp.Revised Date : Page No. : 1/6 N-Channel Enhancement Mode Power MOSFETBVDSS 75VRDSON 13 m MTN1308E3 ID 80ADescription The MTN1308E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effective
Другие MOSFET... MTN10N65EA , MTN10N65FP , MTN10N65FPG , MTN10N70EA , MTN12N60E3 , MTN12N60FP , MTN12N65FP , MTN1308E3 , STP75NF75 , MTN138KS3 , MTN138ZN3 , MTN13N50E3 , MTN13N50FP , MTN14N60FP , MTN15N50E3 , MTN15N50F3 , MTN15N50FP .
History: 2SK735 | P1503HK | RFP12N06RLE | SUD20P15-306 | IRF7946 | HM180N02 | SWN5N70K
History: 2SK735 | P1503HK | RFP12N06RLE | SUD20P15-306 | IRF7946 | HM180N02 | SWN5N70K



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