MTN2N60FP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTN2N60FP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 23 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 31.6 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.1 Ohm
Paquete / Cubierta: TO-220FP
Búsqueda de reemplazo de MTN2N60FP MOSFET
MTN2N60FP Datasheet (PDF)
mtn2n60fp.pdf

Spec. No. : C435FP Issued Date : 2009.01.19 CYStech Electronics Corp. Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 4.1 typ. MTN2N60FP ID : 2A Description The MTN2N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
mtn2n60j3.pdf

Spec. No. : C435J3 Issued Date : 2009.01.20 CYStech Electronics Corp.Revised Date :2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 4.0(typ.) MTN2N60J3 ID : 2A Description The MTN2N60J3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res
mtn2n60i3.pdf

Spec. No. : C435I3 Issued Date : 2009.01.20 CYStech Electronics Corp.Revised Date :2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 4.0(typ.) MTN2N60I3 ID : 2A Description The MTN2N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res
mtn2n65j3.pdf

Spec. No. : C722J3 Issued Date : 2010.08.06 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDSON(typ): 6.2 MTN2N65J3 ID : 1.8A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package
Otros transistores... MTN2510J3 , MTN2510LE3 , MTN2510LJ3 , MTN2572F3 , MTN2572FP , MTN2572H8 , MTN2572J3 , MTN2604G6 , 2N60 , MTN2N60I3 , MTN2N60J3 , MTN2N65AI3 , MTN2N65FP , MTN2N65I3 , MTN2N65J3 , MTN2N70FP , MTN2N70I3 .
History: IRHM7130 | FTP02N65B | NP80N03MLE | GM2302 | 2SJ402
History: IRHM7130 | FTP02N65B | NP80N03MLE | GM2302 | 2SJ402



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