All MOSFET. MTN2N60FP Datasheet

 

MTN2N60FP MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTN2N60FP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 31.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.1 Ohm
   Package: TO-220FP

 MTN2N60FP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTN2N60FP Datasheet (PDF)

 ..1. Size:284K  cystek
 mtn2n60fp.pdf

MTN2N60FP MTN2N60FP

Spec. No. : C435FP Issued Date : 2009.01.19 CYStech Electronics Corp. Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 4.1 typ. MTN2N60FP ID : 2A Description The MTN2N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 7.1. Size:357K  cystek
 mtn2n60j3.pdf

MTN2N60FP MTN2N60FP

Spec. No. : C435J3 Issued Date : 2009.01.20 CYStech Electronics Corp.Revised Date :2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 4.0(typ.) MTN2N60J3 ID : 2A Description The MTN2N60J3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res

 7.2. Size:337K  cystek
 mtn2n60i3.pdf

MTN2N60FP MTN2N60FP

Spec. No. : C435I3 Issued Date : 2009.01.20 CYStech Electronics Corp.Revised Date :2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 4.0(typ.) MTN2N60I3 ID : 2A Description The MTN2N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res

 8.1. Size:333K  cystek
 mtn2n65j3.pdf

MTN2N60FP MTN2N60FP

Spec. No. : C722J3 Issued Date : 2010.08.06 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDSON(typ): 6.2 MTN2N65J3 ID : 1.8A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package

 8.2. Size:336K  cystek
 mtn2n65i3.pdf

MTN2N60FP MTN2N60FP

Spec. No. : C722I3 Issued Date : 2009.08.14 CYStech Electronics Corp.Revised Date : 2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDSON(typ): 6.2 MTN2N65I3 ID : 1.8A Description The MTN2N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi

 8.3. Size:273K  cystek
 mtn2n65fp.pdf

MTN2N60FP MTN2N60FP

Spec. No. : C722FP Issued Date : 2010.03.15 CYStech Electronics Corp.Revised Date :2012.11.08 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 5.8 (typ.) MTN2N65FP ID : 1.8A Description The MTN2N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

 8.4. Size:337K  cystek
 mtn2n65ai3.pdf

MTN2N60FP MTN2N60FP

Spec. No. : C799I3 Issued Date : 2010.03.29 CYStech Electronics Corp.Revised Date :2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDSON(typ.) : 5.0 MTN2N65AI3 ID : 2A Description The MTN2N65AI3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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