MTN4N01Q8 Todos los transistores

 

MTN4N01Q8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTN4N01Q8
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SOP-8
     - Selección de transistores por parámetros

 

MTN4N01Q8 Datasheet (PDF)

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 mtn4n01q8.pdf pdf_icon

MTN4N01Q8

Spec. No. : C804Q8 Issued Date : 2009.12.16 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 20VRDSON(MAX) 30m MTN4N01Q8 ID 6ADescription The MTN4N01Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

 9.1. Size:393K  cystek
 mtn4n65f3.pdf pdf_icon

MTN4N01Q8

Spec. No. : C797F3 Issued Date : 2015.03.06 CYStech Electronics Corp.Revised Date : Page No. : 1/ 11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 3 (typ.) MTN4N65F3 ID : 4A Features Low On Resistance Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and RoHS compliant package Applications Adapter

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 mtn4n65fp.pdf pdf_icon

MTN4N01Q8

Spec. No. : C797FP Issued Date : 2010.06.09 CYStech Electronics Corp. Revised Date : 2014.07.28 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 3 (typ.) MTN4N65FP ID : 4A Description The MTN4N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

 9.3. Size:332K  cystek
 mtn4n65i3.pdf pdf_icon

MTN4N01Q8

Spec. No. : C797I3 Issued Date : 2010.03.29 CYStech Electronics Corp.Revised Date : 2013.10.18 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 3.0(typ.) MTN4N65I3 ID : 4A Description The MTN4N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXTU2N80P | MEE7816AS-G | SVSP14N60TD2

 

 
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