MTN4N01Q8
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTN4N01Q8
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 20
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10
V
|Id|ⓘ - Corriente continua de drenaje: 6
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Qgⓘ - Carga de la puerta: 11
nC
trⓘ - Tiempo de subida: 35
nS
Cossⓘ - Capacitancia
de salida: 260
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03
Ohm
Paquete / Cubierta:
SOP-8
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MTN4N01Q8
Datasheet (PDF)
..1. Size:617K cystek
mtn4n01q8.pdf 
Spec. No. : C804Q8 Issued Date : 2009.12.16 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 20VRDSON(MAX) 30m MTN4N01Q8 ID 6ADescription The MTN4N01Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and
9.1. Size:393K cystek
mtn4n65f3.pdf 
Spec. No. : C797F3 Issued Date : 2015.03.06 CYStech Electronics Corp.Revised Date : Page No. : 1/ 11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 3 (typ.) MTN4N65F3 ID : 4A Features Low On Resistance Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and RoHS compliant package Applications Adapter
9.2. Size:504K cystek
mtn4n65fp.pdf 
Spec. No. : C797FP Issued Date : 2010.06.09 CYStech Electronics Corp. Revised Date : 2014.07.28 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 3 (typ.) MTN4N65FP ID : 4A Description The MTN4N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-
9.3. Size:332K cystek
mtn4n65i3.pdf 
Spec. No. : C797I3 Issued Date : 2010.03.29 CYStech Electronics Corp.Revised Date : 2013.10.18 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 3.0(typ.) MTN4N65I3 ID : 4A Description The MTN4N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
9.4. Size:286K cystek
mtn4n60fp.pdf 
Spec. No. : C408FP Issued Date : 2008.09.02 CYStech Electronics Corp.Revised Date :2012.11.20 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.1(typ.) MTN4N60FP ID : 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
9.5. Size:320K cystek
mtn4n60e3.pdf 
Spec. No. : C408E3 Issued Date : 2010.12.06 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.1(typ.) MTN4N60E3 ID : 4A Description The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and
9.6. Size:357K cystek
mtn4n60j3.pdf 
Spec. No. : C408I3 Issued Date : 2010.01.04 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.8(typ.) MTN4N60J3 ID : 4A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating package Applications
9.7. Size:327K cystek
mtn4n65j3.pdf 
Spec. No. : C797J3 Issued Date : 2011.09.14 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 3.0(typ.) MTN4N65J3 ID : 4A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package
9.8. Size:315K cystek
mtn4n60afp.pdf 
Spec. No. : C408FP-B Issued Date : 2010.03.15 CYStech Electronics Corp.Revised Date : 2011.03.29 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) typ: 2.8 MTN4N60AFP ID : 4A Description The MTN4N60AFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
9.9. Size:239K cystek
mtn4n60ae3.pdf 
Spec. No. : C408E3-A Issued Date : 2011.01.19 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.8(typ.) MTN4N60AE3 ID : 4A Description The MTN4N60AE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance
9.10. Size:339K cystek
mtn4n60i3.pdf 
Spec. No. : C408I3 Issued Date : 2010.01.04 CYStech Electronics Corp.Revised Date : 2013.10.18 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.8(typ.) MTN4N60I3 ID : 4A Description The MTN4N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
9.11. Size:330K cystek
mtn4n70i3.pdf 
Spec. No. : C797I3 Issued Date : 2010.03.29 CYStech Electronics Corp.Revised Date : 2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V RDS(ON) : 3.0(typ.) MTN4N70I3 ID : 4A Description The MTN4N70I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
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