MTN4N01Q8 - описание и поиск аналогов

 ..1. Size:617K  cystek
 mtn4n01q8.pdf 

Spec. No. C804Q8 Issued Date 2009.12.16 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 20V RDSON(MAX) 30m MTN4N01Q8 ID 6A Description The MTN4N01Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

 9.1. Size:393K  cystek
 mtn4n65f3.pdf 

Spec. No. C797F3 Issued Date 2015.03.06 CYStech Electronics Corp. Revised Date Page No. 1/ 11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3 (typ.) MTN4N65F3 ID 4A Features Low On Resistance Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and RoHS compliant package Applications Adapter

 9.2. Size:504K  cystek
 mtn4n65fp.pdf 

Spec. No. C797FP Issued Date 2010.06.09 CYStech Electronics Corp. Revised Date 2014.07.28 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3 (typ.) MTN4N65FP ID 4A Description The MTN4N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

 9.3. Size:332K  cystek
 mtn4n65i3.pdf 

Spec. No. C797I3 Issued Date 2010.03.29 CYStech Electronics Corp. Revised Date 2013.10.18 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3.0 (typ.) MTN4N65I3 ID 4A Description The MTN4N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 9.4. Size:286K  cystek
 mtn4n60fp.pdf 

Spec. No. C408FP Issued Date 2008.09.02 CYStech Electronics Corp. Revised Date 2012.11.20 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN4N60FP ID 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 9.5. Size:320K  cystek
 mtn4n60e3.pdf 

Spec. No. C408E3 Issued Date 2010.12.06 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN4N60E3 ID 4A Description The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

 9.6. Size:357K  cystek
 mtn4n60j3.pdf 

Spec. No. C408I3 Issued Date 2010.01.04 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.8 (typ.) MTN4N60J3 ID 4A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating package Applications

 9.7. Size:327K  cystek
 mtn4n65j3.pdf 

Spec. No. C797J3 Issued Date 2011.09.14 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3.0 (typ.) MTN4N65J3 ID 4A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package

 9.8. Size:315K  cystek
 mtn4n60afp.pdf 

Spec. No. C408FP-B Issued Date 2010.03.15 CYStech Electronics Corp. Revised Date 2011.03.29 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) typ 2.8 MTN4N60AFP ID 4A Description The MTN4N60AFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 9.9. Size:239K  cystek
 mtn4n60ae3.pdf 

Spec. No. C408E3-A Issued Date 2011.01.19 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.8 (typ.) MTN4N60AE3 ID 4A Description The MTN4N60AE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 9.10. Size:339K  cystek
 mtn4n60i3.pdf 

Spec. No. C408I3 Issued Date 2010.01.04 CYStech Electronics Corp. Revised Date 2013.10.18 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.8 (typ.) MTN4N60I3 ID 4A Description The MTN4N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 9.11. Size:330K  cystek
 mtn4n70i3.pdf 

Spec. No. C797I3 Issued Date 2010.03.29 CYStech Electronics Corp. Revised Date 2011.11.10 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 700V RDS(ON) 3.0 (typ.) MTN4N70I3 ID 4A Description The MTN4N70I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re