MTN4N01Q8 Specs and Replacement

Type Designator: MTN4N01Q8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOP-8

MTN4N01Q8 substitution

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MTN4N01Q8 datasheet

 ..1. Size:617K  cystek
 mtn4n01q8.pdf pdf_icon

MTN4N01Q8

Spec. No. C804Q8 Issued Date 2009.12.16 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 20V RDSON(MAX) 30m MTN4N01Q8 ID 6A Description The MTN4N01Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and... See More ⇒

 9.1. Size:393K  cystek
 mtn4n65f3.pdf pdf_icon

MTN4N01Q8

Spec. No. C797F3 Issued Date 2015.03.06 CYStech Electronics Corp. Revised Date Page No. 1/ 11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3 (typ.) MTN4N65F3 ID 4A Features Low On Resistance Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and RoHS compliant package Applications Adapter ... See More ⇒

 9.2. Size:504K  cystek
 mtn4n65fp.pdf pdf_icon

MTN4N01Q8

Spec. No. C797FP Issued Date 2010.06.09 CYStech Electronics Corp. Revised Date 2014.07.28 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3 (typ.) MTN4N65FP ID 4A Description The MTN4N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-... See More ⇒

 9.3. Size:332K  cystek
 mtn4n65i3.pdf pdf_icon

MTN4N01Q8

Spec. No. C797I3 Issued Date 2010.03.29 CYStech Electronics Corp. Revised Date 2013.10.18 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3.0 (typ.) MTN4N65I3 ID 4A Description The MTN4N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re... See More ⇒

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Detailed specifications: MTN3N65FP, MTN40N03I3, MTN40N03J3, MTN4402Q8, MTN4410Q8, MTN4410V8, MTN4424Q8, MTN4800V8, AO3400, MTN4N60AE3, MTN4N60AFP, MTN4N60E3, MTN4N60FP, MTN4N60I3, MTN4N60J3, MTN4N65FP, MTN4N65I3

Keywords - MTN4N01Q8 MOSFET specs

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