MTN4N60I3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN4N60I3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 51 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm

Encapsulados: TO-251

 Búsqueda de reemplazo de MTN4N60I3 MOSFET

- Selecciónⓘ de transistores por parámetros

 

MTN4N60I3 datasheet

 ..1. Size:339K  cystek
 mtn4n60i3.pdf pdf_icon

MTN4N60I3

Spec. No. C408I3 Issued Date 2010.01.04 CYStech Electronics Corp. Revised Date 2013.10.18 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.8 (typ.) MTN4N60I3 ID 4A Description The MTN4N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 7.1. Size:286K  cystek
 mtn4n60fp.pdf pdf_icon

MTN4N60I3

Spec. No. C408FP Issued Date 2008.09.02 CYStech Electronics Corp. Revised Date 2012.11.20 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN4N60FP ID 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 7.2. Size:320K  cystek
 mtn4n60e3.pdf pdf_icon

MTN4N60I3

Spec. No. C408E3 Issued Date 2010.12.06 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN4N60E3 ID 4A Description The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

 7.3. Size:357K  cystek
 mtn4n60j3.pdf pdf_icon

MTN4N60I3

Spec. No. C408I3 Issued Date 2010.01.04 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.8 (typ.) MTN4N60J3 ID 4A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating package Applications

MOSTRAR MÁS

Otros transistores... MTN4410V8, MTN4424Q8, MTN4800V8, MTN4N01Q8, MTN4N60AE3, MTN4N60AFP, MTN4N60E3, MTN4N60FP, IRFB4115, MTN4N60J3, MTN4N65FP, MTN4N65I3, MTN4N65J3, MTN4N70I3, MTN50N06E3, MTN540J3, MTN5N50E3