MTN4N60I3 Specs and Replacement

Type Designator: MTN4N60I3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 51 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO-251

MTN4N60I3 substitution

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MTN4N60I3 datasheet

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 mtn4n60i3.pdf pdf_icon

MTN4N60I3

Spec. No. C408I3 Issued Date 2010.01.04 CYStech Electronics Corp. Revised Date 2013.10.18 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.8 (typ.) MTN4N60I3 ID 4A Description The MTN4N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re... See More ⇒

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 mtn4n60fp.pdf pdf_icon

MTN4N60I3

Spec. No. C408FP Issued Date 2008.09.02 CYStech Electronics Corp. Revised Date 2012.11.20 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN4N60FP ID 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re... See More ⇒

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MTN4N60I3

Spec. No. C408E3 Issued Date 2010.12.06 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN4N60E3 ID 4A Description The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and... See More ⇒

 7.3. Size:357K  cystek
 mtn4n60j3.pdf pdf_icon

MTN4N60I3

Spec. No. C408I3 Issued Date 2010.01.04 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.8 (typ.) MTN4N60J3 ID 4A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating package Applications ... See More ⇒

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Detailed specifications: MTN4410V8, MTN4424Q8, MTN4800V8, MTN4N01Q8, MTN4N60AE3, MTN4N60AFP, MTN4N60E3, MTN4N60FP, IRFB4115, MTN4N60J3, MTN4N65FP, MTN4N65I3, MTN4N65J3, MTN4N70I3, MTN50N06E3, MTN540J3, MTN5N50E3

Keywords - MTN4N60I3 MOSFET specs

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