All MOSFET. MTN4N60I3 Datasheet

 

MTN4N60I3 Datasheet and Replacement


   Type Designator: MTN4N60I3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO-251
 

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MTN4N60I3 Datasheet (PDF)

 ..1. Size:339K  cystek
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MTN4N60I3

Spec. No. : C408I3 Issued Date : 2010.01.04 CYStech Electronics Corp.Revised Date : 2013.10.18 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.8(typ.) MTN4N60I3 ID : 4A Description The MTN4N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 7.1. Size:286K  cystek
 mtn4n60fp.pdf pdf_icon

MTN4N60I3

Spec. No. : C408FP Issued Date : 2008.09.02 CYStech Electronics Corp.Revised Date :2012.11.20 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.1(typ.) MTN4N60FP ID : 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 7.2. Size:320K  cystek
 mtn4n60e3.pdf pdf_icon

MTN4N60I3

Spec. No. : C408E3 Issued Date : 2010.12.06 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.1(typ.) MTN4N60E3 ID : 4A Description The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

 7.3. Size:357K  cystek
 mtn4n60j3.pdf pdf_icon

MTN4N60I3

Spec. No. : C408I3 Issued Date : 2010.01.04 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.8(typ.) MTN4N60J3 ID : 4A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating package Applications

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Datasheet: MTN4410V8 , MTN4424Q8 , MTN4800V8 , MTN4N01Q8 , MTN4N60AE3 , MTN4N60AFP , MTN4N60E3 , MTN4N60FP , IRFB4115 , MTN4N60J3 , MTN4N65FP , MTN4N65I3 , MTN4N65J3 , MTN4N70I3 , MTN50N06E3 , MTN540J3 , MTN5N50E3 .

History: NTBS9D0N10MC | FQNL1N50BBU

Keywords - MTN4N60I3 MOSFET datasheet

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