MTN5N60E3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN5N60E3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.2 nS

Cossⓘ - Capacitancia de salida: 86 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.1 Ohm

Encapsulados: TO-220AB

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MTN5N60E3 datasheet

 ..1. Size:320K  cystek
 mtn5n60e3.pdf pdf_icon

MTN5N60E3

Spec. No. C408E3-A Issued Date 2010.09.08 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN5N60E3 ID 4.5A Description The MTN5N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 7.1. Size:287K  cystek
 mtn5n60fp.pdf pdf_icon

MTN5N60E3

Spec. No. C408FP-A Issued Date 2009.04.20 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN5N60FP ID 4.5A Description The MTN5N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low

 7.2. Size:329K  cystek
 mtn5n60i3.pdf pdf_icon

MTN5N60E3

Spec. No. C408I3-A Issued Date 2010.03.09 CYStech Electronics Corp. Revised Date 2012.11.20 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN5N60I3 ID 5A Description The MTN5N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

 7.3. Size:349K  cystek
 mtn5n60j3.pdf pdf_icon

MTN5N60E3

Spec. No. C408J3 Issued Date 2010.03.09 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN5N60J3 ID 5A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating package Applications

MOSTRAR MÁS

Otros transistores... MTN4N65J3, MTN4N70I3, MTN50N06E3, MTN540J3, MTN5N50E3, MTN5N50FP, MTN5N50I3, MTN5N50J3, IRF9540N, MTN5N60FP, MTN5N60I3, MTN5N60J3, MTN5N65FP, MTN60NF06LJ3, MTN6515E3, MTN6515F3, MTN6515H8