All MOSFET. MTN5N60E3 Datasheet

 

MTN5N60E3 MOSFET. Datasheet pdf. Equivalent

Type Designator: MTN5N60E3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 12.2 nS

Drain-Source Capacitance (Cd): 86 pF

Maximum Drain-Source On-State Resistance (Rds): 2.1 Ohm

Package: TO-220AB

MTN5N60E3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTN5N60E3 Datasheet (PDF)

1.1. mtn5n60e3.pdf Size:320K _cystek

MTN5N60E3 MTN5N60E3

Spec. No. : C408E3-A Issued Date : 2010.09.08 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.1Ω(typ.) MTN5N60E3 ID : 4.5A Description The MTN5N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

3.1. mtn5n60fp.pdf Size:287K _cystek

MTN5N60E3 MTN5N60E3

Spec. No. : C408FP-A Issued Date : 2009.04.20 CYStech Electronics Corp. Revised Date : 2013.08.12 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.1Ω(typ.) MTN5N60FP ID : 4.5A Description The MTN5N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low

3.2. mtn5n60i3.pdf Size:329K _cystek

MTN5N60E3 MTN5N60E3

Spec. No. : C408I3-A Issued Date : 2010.03.09 CYStech Electronics Corp. Revised Date : 2012.11.20 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.1Ω (typ.) MTN5N60I3 ID : 5A Description The MTN5N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

 3.3. mtn5n60j3.pdf Size:349K _cystek

MTN5N60E3 MTN5N60E3

Spec. No. : C408J3 Issued Date : 2010.03.09 CYStech Electronics Corp. Revised Date :2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.1Ω(typ.) MTN5N60J3 ID : 5A Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating package Applications

Datasheet: MTN4N65J3 , MTN4N70I3 , MTN50N06E3 , MTN540J3 , MTN5N50E3 , MTN5N50FP , MTN5N50I3 , MTN5N50J3 , IRFZ48N , MTN5N60FP , MTN5N60I3 , MTN5N60J3 , MTN5N65FP , MTN60NF06LJ3 , MTN6515E3 , MTN6515F3 , MTN6515H8 .

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