MTP162M3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTP162M3

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 54 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: SOT-89

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MTP162M3 datasheet

 ..1. Size:610K  cystek
 mtp162m3.pdf pdf_icon

MTP162M3

Spec. No. C420M3 Issued Date 2007.10.08 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/8 30V P-CHANNEL Enhancement Mode MOSFET MTP162M3 Features Single Drive Requirement Low On-resistance, RDS(ON)=80m @VGS=-4.5V, ID=-3.0A Ultra High Speed Switching Pb-free package Symbol Outline MTP162M3 SOT-89 D G D S G Gate S Source

 9.1. Size:222K  motorola
 mtp16n25erev0x.pdf pdf_icon

MTP162M3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP16N25E/D Designer's Data Sheet MTP16N25E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 16 AMPERES energy in the avalanche and commutation modes. The new energy 250 VOLTS effi

 9.2. Size:193K  motorola
 mtp16n25e.pdf pdf_icon

MTP162M3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP16N25E/D Designer's Data Sheet MTP16N25E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 16 AMPERES energy in the avalanche and commutation modes. The new energy 250 VOLTS effi

 9.3. Size:1383K  jiejie micro
 jmtp160p03d.pdf pdf_icon

MTP162M3

-30V, -11A, 16m P-channel Power Trench MOSFET JMTP160P03D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V Halogen-free; RoHS-compliant VGS(th)_Typ -1.7 V Pb-free plating ID(@VGS=10V) -11 A RDS(ON)_Typ(@VGS=-10V 12 mW Applications RDS(ON)_Typ(@VGS=-4.5V 16 mW Load Switch PWM Application

MOSTRAR MÁS

Otros transistores... MTNN8452KQ8, MTNN8453KQ8, MTP1013C3, MTP1013S3, MTP1067C6, MTP1406J3, MTP1406L3, MTP1406M3, IRFP064N, MTP2010J3, MTP2071M3, MTP2301N3, MTP2301S3, MTP2303N3, MTP2305N3, MTP2311M3, MTP2311N3