MTP162M3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C420M3 Issued Date : 2007.10.08 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/8 30V P-CHANNEL Enhancement Mode MOSFET MTP162M3 Features Single Drive Requirement Low On-resistance, RDS(ON)=80m@VGS=-4.5V, ID=-3.0A Ultra High Speed Switching Pb-free package Symbol Outline MTP162M3 SOT-89 D G D S GGate SSource

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP16N25E/DDesigner's Data SheetMTP16N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high16 AMPERESenergy in the avalanche and commutation modes. The new energy250 VOLTSeffi

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP16N25E/DDesigner's Data SheetMTP16N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high16 AMPERESenergy in the avalanche and commutation modes. The new energy250 VOLTSeffi

-30V, -11A, 16m P-channel Power Trench MOSFETJMTP160P03DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS -30 V Halogen-free; RoHS-compliantVGS(th)_Typ -1.7 V Pb-free platingID(@VGS=10V) -11 ARDS(ON)_Typ(@VGS=-10V 12 mWApplications RDS(ON)_Typ(@VGS=-4.5V 16 mW Load Switch PWM Application