MTP162M3 Datasheet and Replacement
Type Designator: MTP162M3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 54 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT-89
MTP162M3 substitution
MTP162M3 Datasheet (PDF)
mtp162m3.pdf
Spec. No. : C420M3 Issued Date : 2007.10.08 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/8 30V P-CHANNEL Enhancement Mode MOSFET MTP162M3 Features Single Drive Requirement Low On-resistance, RDS(ON)=80m@VGS=-4.5V, ID=-3.0A Ultra High Speed Switching Pb-free package Symbol Outline MTP162M3 SOT-89 D G D S GGate SSource
mtp16n25erev0x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP16N25E/DDesigner's Data SheetMTP16N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high16 AMPERESenergy in the avalanche and commutation modes. The new energy250 VOLTSeffi
mtp16n25e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP16N25E/DDesigner's Data SheetMTP16N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high16 AMPERESenergy in the avalanche and commutation modes. The new energy250 VOLTSeffi
Datasheet: MTNN8452KQ8 , MTNN8453KQ8 , MTP1013C3 , MTP1013S3 , MTP1067C6 , MTP1406J3 , MTP1406L3 , MTP1406M3 , 5N50 , MTP2010J3 , MTP2071M3 , MTP2301N3 , MTP2301S3 , MTP2303N3 , MTP2305N3 , MTP2311M3 , MTP2311N3 .
History: P5010AD | SFF240J | NCE60NF055F | BUZ83 | STD4NK50Z-1 | AP9972AGP | WMN30N80M3
Keywords - MTP162M3 MOSFET datasheet
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History: P5010AD | SFF240J | NCE60NF055F | BUZ83 | STD4NK50Z-1 | AP9972AGP | WMN30N80M3
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