MTP2611V8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MTP2611V8 Datasheet (PDF)

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Spec. No. : C913V8 Issued Date : 2013.07.08 CYStech Electronics Corp.Revised Date : 2013.10.30 Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -20VMTP2611V8 ID -45ARDSON@VGS=-4.5V, ID=-15.3A 8.8m(typ) RDSON@VGS=-2.5V, ID=-13.1A 12.8m(typ)Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and hal

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Spec. No. : C394Q6 Issued Date : 2006.11.24 CYStech Electronics Corp.Revised Date : Page No. : 1/5 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP2603Q6 Description The MTP2603Q6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TSOP-6 package is u

9.2. Size:347K cystek
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Spec. No. : C394G6 Issued Date : 2006.11.24 CYStech Electronics Corp.Revised Date :2012.11.21 Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -20VID -5AMTP2603G6 RDSON@VGS=-10V, ID=-4.5A 35m(typ.) RDSON@VGS=-4.5V, ID=-4.2A 41m(typ.) RDSON@VGS=-2.5V, ID=-2A 55m(typ.) RDSON@VGS=-1.8V, ID=-1A 60m(typ.) Description The MTP2603G6 is a P-channel enhancemen

9.3. Size:397K cystek
mtp2603n6.pdf pdf_icon

Spec. No. : C394N6 Issued Date : 2007.12.28 CYStech Electronics Corp.Revised Date : 2011.10.31 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP2603N6 Description The MTP2603N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 pac

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