MTP2611V8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTP2611V8

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 415 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0088 Ohm

Encapsulados: DFN3X3

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MTP2611V8 datasheet

 ..1. Size:322K  cystek
 mtp2611v8.pdf pdf_icon

MTP2611V8

Spec. No. C913V8 Issued Date 2013.07.08 CYStech Electronics Corp. Revised Date 2013.10.30 Page No. 1/9 P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2611V8 ID -45A RDSON@VGS=-4.5V, ID=-15.3A 8.8m (typ) RDSON@VGS=-2.5V, ID=-13.1A 12.8m (typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and hal

 9.1. Size:378K  cystek
 mtp2603q6.pdf pdf_icon

MTP2611V8

Spec. No. C394Q6 Issued Date 2006.11.24 CYStech Electronics Corp. Revised Date Page No. 1/5 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP2603Q6 Description The MTP2603Q6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TSOP-6 package is u

 9.2. Size:347K  cystek
 mtp2603g6.pdf pdf_icon

MTP2611V8

Spec. No. C394G6 Issued Date 2006.11.24 CYStech Electronics Corp. Revised Date 2012.11.21 Page No. 1/9 P-Channel Enhancement Mode MOSFET BVDSS -20V ID -5A MTP2603G6 RDSON@VGS=-10V, ID=-4.5A 35m (typ.) RDSON@VGS=-4.5V, ID=-4.2A 41m (typ.) RDSON@VGS=-2.5V, ID=-2A 55m (typ.) RDSON@VGS=-1.8V, ID=-1A 60m (typ.) Description The MTP2603G6 is a P-channel enhancemen

 9.3. Size:397K  cystek
 mtp2603n6.pdf pdf_icon

MTP2611V8

Spec. No. C394N6 Issued Date 2007.12.28 CYStech Electronics Corp. Revised Date 2011.10.31 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP2603N6 Description The MTP2603N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 pac

MOSTRAR MÁS

Otros transistores... MTP2311M3, MTP2311N3, MTP2311V8, MTP2317N3, MTP2402Q8, MTP2603G6, MTP2603N6, MTP2603Q6, IRLZ44N, MTP2955L3, MTP3001N3, MTP3401N3, MTP3403AN3, MTP3403KN3, MTP3403N3, MTP3413N3, MTP3415KN3