MTP2611V8 Specs and Replacement
Type Designator: MTP2611V8
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 415 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: DFN3X3
MTP2611V8 substitution
- MOSFET ⓘ Cross-Reference Search
MTP2611V8 datasheet
mtp2611v8.pdf
Spec. No. C913V8 Issued Date 2013.07.08 CYStech Electronics Corp. Revised Date 2013.10.30 Page No. 1/9 P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2611V8 ID -45A RDSON@VGS=-4.5V, ID=-15.3A 8.8m (typ) RDSON@VGS=-2.5V, ID=-13.1A 12.8m (typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and hal... See More ⇒
mtp2603q6.pdf
Spec. No. C394Q6 Issued Date 2006.11.24 CYStech Electronics Corp. Revised Date Page No. 1/5 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP2603Q6 Description The MTP2603Q6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TSOP-6 package is u... See More ⇒
mtp2603g6.pdf
Spec. No. C394G6 Issued Date 2006.11.24 CYStech Electronics Corp. Revised Date 2012.11.21 Page No. 1/9 P-Channel Enhancement Mode MOSFET BVDSS -20V ID -5A MTP2603G6 RDSON@VGS=-10V, ID=-4.5A 35m (typ.) RDSON@VGS=-4.5V, ID=-4.2A 41m (typ.) RDSON@VGS=-2.5V, ID=-2A 55m (typ.) RDSON@VGS=-1.8V, ID=-1A 60m (typ.) Description The MTP2603G6 is a P-channel enhancemen... See More ⇒
mtp2603n6.pdf
Spec. No. C394N6 Issued Date 2007.12.28 CYStech Electronics Corp. Revised Date 2011.10.31 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP2603N6 Description The MTP2603N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 pac... See More ⇒
Detailed specifications: MTP2311M3, MTP2311N3, MTP2311V8, MTP2317N3, MTP2402Q8, MTP2603G6, MTP2603N6, MTP2603Q6, IRLZ44N, MTP2955L3, MTP3001N3, MTP3401N3, MTP3403AN3, MTP3403KN3, MTP3403N3, MTP3413N3, MTP3415KN3
Keywords - MTP2611V8 MOSFET specs
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