All MOSFET. MTP2611V8 Datasheet

 

MTP2611V8 Datasheet and Replacement


   Type Designator: MTP2611V8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 415 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: DFN3X3
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MTP2611V8 Datasheet (PDF)

 ..1. Size:322K  cystek
mtp2611v8.pdf pdf_icon

MTP2611V8

Spec. No. : C913V8 Issued Date : 2013.07.08 CYStech Electronics Corp.Revised Date : 2013.10.30 Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -20VMTP2611V8 ID -45ARDSON@VGS=-4.5V, ID=-15.3A 8.8m(typ) RDSON@VGS=-2.5V, ID=-13.1A 12.8m(typ)Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and hal

 9.1. Size:378K  cystek
mtp2603q6.pdf pdf_icon

MTP2611V8

Spec. No. : C394Q6 Issued Date : 2006.11.24 CYStech Electronics Corp.Revised Date : Page No. : 1/5 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP2603Q6 Description The MTP2603Q6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TSOP-6 package is u

 9.2. Size:347K  cystek
mtp2603g6.pdf pdf_icon

MTP2611V8

Spec. No. : C394G6 Issued Date : 2006.11.24 CYStech Electronics Corp.Revised Date :2012.11.21 Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -20VID -5AMTP2603G6 RDSON@VGS=-10V, ID=-4.5A 35m(typ.) RDSON@VGS=-4.5V, ID=-4.2A 41m(typ.) RDSON@VGS=-2.5V, ID=-2A 55m(typ.) RDSON@VGS=-1.8V, ID=-1A 60m(typ.) Description The MTP2603G6 is a P-channel enhancemen

 9.3. Size:397K  cystek
mtp2603n6.pdf pdf_icon

MTP2611V8

Spec. No. : C394N6 Issued Date : 2007.12.28 CYStech Electronics Corp.Revised Date : 2011.10.31 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP2603N6 Description The MTP2603N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 pac

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: APT38F80L | SM2F04NSU | BRCS200P03DP | IRLR8259PBF | AP2305CGN-HF | TSM4424CS | SFB052N100C2

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