MTP3413N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTP3413N3
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 103 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm
   Paquete / Cubierta: SOT-23

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MTP3413N3 Datasheet (PDF)

..1. Size:353K cystek
mtp3413n3.pdf

Spec. No. : C394N3 Issued Date : 2012.01.19 CYStech Electronics Corp.Revised Date : 2014.03.04 Page No. : 1/9 P-Channel Logic Level Enhancement Mode MOSFET BVDSS -20VMTP3413N3 ID -4.9AVGS=-4.5V, ID=-4.3A 39m VGS=-2.5V, ID=-2.5ARDSON(TYP) 50m VGS=-1.8V, ID=-2A 65m Features 1.8V gate rated Advanced trench process technology High density cell desig

8.1. Size:293K cystek
mtp3415kn3.pdf

Spec. No. : C589N3 Issued Date : 2010.11.09 CYStech Electronics Corp.Revised Date : 2014.07.11 Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -20VID -4.4AVGS=-4.5V, ID=-4A MTP3415KN3 33m VGS=-2.5V, ID=-4A 42m RDSON(TYP) VGS=-1.8V, ID=-2A 52m Features ESD protected 3KVAdvanced trench process technology High density cell design for ultra lo

9.1. Size:340K cystek
mtp3403n3.pdf

Spec. No. : C422N3 Issued Date : 2007.10.16 CYStech Electronics Corp.Revised Date : 2013.10.24 Page No. : 1/8 P-CHANNEL Enhancement Mode MOSFET BVDSS -30VMTP3403N3 ID -3.7ARDSON@VGS=-10V, ID=-3A 52m(typ)RDSON@VGS=-4.5V,ID=-2.6A 76m(typ)Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High densit

9.2. Size:392K cystek
mtp3403an3.pdf

Spec. No. : C387N3 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date : 2011.11.29 Page No. : 1/7 P-CHANNEL Enhancement Mode MOSFET MTP3403AN3 Features V =-30V DS@V =-4.5V, I =-2A R =85m GS DSDS(ON)@V =-2.5V, I =-1A R =120m GS DSDS(ON) Advanced trench process technology High density cell design for ultra low on resistance Low

9.3. Size:300K cystek
mtp3403kn3.pdf

Spec. No. : C865N3 Issued Date : 2012.08.08 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30VMTP3403KN3 ID -3.3ARDS(ON)@VGS=-10V, ID=-2.5A 63m(typ) RDS(ON)@VGS=-4.5V, ID=-1.35A 100m(typ)RDS(ON)@VGS=-4V, ID=-1.35A 114m(typ)Features Advanced trench process technology High density cell design for ultra low

9.4. Size:421K cystek
mtp3401n3.pdf

Spec. No. : C388N3 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date :2017.06.19 Page No. : 1/9 P-CHANNEL Enhancement Mode MOSFET BVDSS -30VMTP3401N3 ID@VGS=-10V, TA=25C -4.2A RDS(ON)@VGS=-10V, ID=-4.2A 46m(typ)RDS(ON)@VGS=-4.5V, ID=-4A 51m(typ)RDS(ON)@VGS=-2.5V, ID=-1A 59m(typ)Features Advanced trench process technology High density c

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