MTP3413N3 Todos los transistores

 ..1. Size:353K  cystek
 mtp3413n3.pdf

Spec. No. C394N3 Issued Date 2012.01.19 CYStech Electronics Corp. Revised Date 2014.03.04 Page No. 1/9 P-Channel Logic Level Enhancement Mode MOSFET BVDSS -20V MTP3413N3 ID -4.9A VGS=-4.5V, ID=-4.3A 39m VGS=-2.5V, ID=-2.5A RDSON(TYP) 50m VGS=-1.8V, ID=-2A 65m Features 1.8V gate rated Advanced trench process technology High density cell desig

 8.1. Size:293K  cystek
 mtp3415kn3.pdf

Spec. No. C589N3 Issued Date 2010.11.09 CYStech Electronics Corp. Revised Date 2014.07.11 Page No. 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -20V ID -4.4A VGS=-4.5V, ID=-4A MTP3415KN3 33m VGS=-2.5V, ID=-4A 42m RDSON(TYP) VGS=-1.8V, ID=-2A 52m Features ESD protected 3KV Advanced trench process technology High density cell design for ultra lo

 9.1. Size:340K  cystek
 mtp3403n3.pdf

Spec. No. C422N3 Issued Date 2007.10.16 CYStech Electronics Corp. Revised Date 2013.10.24 Page No. 1/8 P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP3403N3 ID -3.7A RDSON@VGS=-10V, ID=-3A 52m (typ) RDSON@VGS=-4.5V,ID=-2.6A 76m (typ) Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High densit

 9.2. Size:392K  cystek
 mtp3403an3.pdf

Spec. No. C387N3 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2011.11.29 Page No. 1/7 P-CHANNEL Enhancement Mode MOSFET MTP3403AN3 Features V =-30V DS @V =-4.5V, I =-2A R =85m GS DS DS(ON) @V =-2.5V, I =-1A R =120m GS DS DS(ON) Advanced trench process technology High density cell design for ultra low on resistance Low

 9.3. Size:300K  cystek
 mtp3403kn3.pdf

Spec. No. C865N3 Issued Date 2012.08.08 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30V MTP3403KN3 ID -3.3A RDS(ON)@VGS=-10V, ID=-2.5A 63m (typ) RDS(ON)@VGS=-4.5V, ID=-1.35A 100m (typ) RDS(ON)@VGS=-4V, ID=-1.35A 114m (typ) Features Advanced trench process technology High density cell design for ultra low

 9.4. Size:421K  cystek
 mtp3401n3.pdf

Spec. No. C388N3 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2017.06.19 Page No. 1/9 P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP3401N3 ID@VGS=-10V, TA=25 C -4.2A RDS(ON)@VGS=-10V, ID=-4.2A 46m (typ) RDS(ON)@VGS=-4.5V, ID=-4A 51m (typ) RDS(ON)@VGS=-2.5V, ID=-1A 59m (typ) Features Advanced trench process technology High density c

 9.5. Size:1152K  jiejie micro
 jmtp340p03a.pdf

JMTP340P03A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -7A Load Switch RDS(ON)