MTP3413N3 Specs and Replacement

Type Designator: MTP3413N3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 103 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: SOT-23

MTP3413N3 substitution

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MTP3413N3 datasheet

 ..1. Size:353K  cystek
 mtp3413n3.pdf pdf_icon

MTP3413N3

Spec. No. C394N3 Issued Date 2012.01.19 CYStech Electronics Corp. Revised Date 2014.03.04 Page No. 1/9 P-Channel Logic Level Enhancement Mode MOSFET BVDSS -20V MTP3413N3 ID -4.9A VGS=-4.5V, ID=-4.3A 39m VGS=-2.5V, ID=-2.5A RDSON(TYP) 50m VGS=-1.8V, ID=-2A 65m Features 1.8V gate rated Advanced trench process technology High density cell desig... See More ⇒

 8.1. Size:293K  cystek
 mtp3415kn3.pdf pdf_icon

MTP3413N3

Spec. No. C589N3 Issued Date 2010.11.09 CYStech Electronics Corp. Revised Date 2014.07.11 Page No. 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -20V ID -4.4A VGS=-4.5V, ID=-4A MTP3415KN3 33m VGS=-2.5V, ID=-4A 42m RDSON(TYP) VGS=-1.8V, ID=-2A 52m Features ESD protected 3KV Advanced trench process technology High density cell design for ultra lo... See More ⇒

 9.1. Size:340K  cystek
 mtp3403n3.pdf pdf_icon

MTP3413N3

Spec. No. C422N3 Issued Date 2007.10.16 CYStech Electronics Corp. Revised Date 2013.10.24 Page No. 1/8 P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP3403N3 ID -3.7A RDSON@VGS=-10V, ID=-3A 52m (typ) RDSON@VGS=-4.5V,ID=-2.6A 76m (typ) Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High densit... See More ⇒

 9.2. Size:392K  cystek
 mtp3403an3.pdf pdf_icon

MTP3413N3

Spec. No. C387N3 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2011.11.29 Page No. 1/7 P-CHANNEL Enhancement Mode MOSFET MTP3403AN3 Features V =-30V DS @V =-4.5V, I =-2A R =85m GS DS DS(ON) @V =-2.5V, I =-1A R =120m GS DS DS(ON) Advanced trench process technology High density cell design for ultra low on resistance Low ... See More ⇒

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Detailed specifications: MTP2603Q6, MTP2611V8, MTP2955L3, MTP3001N3, MTP3401N3, MTP3403AN3, MTP3403KN3, MTP3403N3, 10N60, MTP3415KN3, MTP3J15N3, MTP3J15Y3, MTP3LP01N3, MTP3LP01S3, MTP3LP01Y3, MTP405CJ3, MTP405J3

Keywords - MTP3413N3 MOSFET specs

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