MTP4835Q8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTP4835Q8

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 39 nS

Cossⓘ - Capacitancia de salida: 143 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm

Encapsulados: SOP-8

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MTP4835Q8 datasheet

 ..1. Size:301K  cystek
 mtp4835q8.pdf pdf_icon

MTP4835Q8

Spec. No. C830Q8 Issued Date 2012.06.22 CYStech Electronics Corp. Revised Date Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4835Q8 ID -10A RDSON@VGS=-10V, ID=-10A 17m (typ) RDSON@VGS=-4.5V,ID=-6A 26m (typ) Description The MTP4835Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, rug

 7.1. Size:363K  cystek
 mtp4835v8.pdf pdf_icon

MTP4835Q8

Spec. No. C830V8 Issued Date 2013.01.23 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTP4835V8 ID -33A 16m (typ.) RDSON(MAX)@VGS=-10V, ID=-10A 25m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-7A Description The MTP4835V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of

 7.2. Size:335K  cystek
 mtp4835l3.pdf pdf_icon

MTP4835Q8

Spec. No. C830L3 Issued Date 2013.02.01 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET MTP4835L3 BVDSS -30V ID -10A 21m (typ) RDSON@VGS=-10V, ID=-10A 28m (typ) RDSON@VGS=-5V, ID=-7A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalen

 7.3. Size:305K  cystek
 mtp4835aq8.pdf pdf_icon

MTP4835Q8

Spec. No. C830Q8 Issued Date 2012.09.19 CYStech Electronics Corp. Revised Date 2013.10.30 Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4835AQ8 ID -10A RDSON@VGS=-10V, ID=-10A 18m (typ) RDSON@VGS=-4.5V,ID=-6A 27m (typ) Description The MTP4835AQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s

MOSTRAR MÁS

Otros transistores... MTP4413Q8, MTP4423Q8, MTP4435V8, MTP4463Q8, MTP452L3, MTP452M3, MTP4835AQ8, MTP4835L3, 12N60, MTP4835V8, MTP5103J3, MTP5103N3, MTP5210F3, MTP5614N6, MTP6405N6, MTP658G6, MTP7425Q8