MTP4835Q8 Specs and Replacement

Type Designator: MTP4835Q8

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 143 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: SOP-8

MTP4835Q8 substitution

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MTP4835Q8 datasheet

 ..1. Size:301K  cystek
mtp4835q8.pdf pdf_icon

MTP4835Q8

Spec. No. C830Q8 Issued Date 2012.06.22 CYStech Electronics Corp. Revised Date Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4835Q8 ID -10A RDSON@VGS=-10V, ID=-10A 17m (typ) RDSON@VGS=-4.5V,ID=-6A 26m (typ) Description The MTP4835Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, rug... See More ⇒

 7.1. Size:363K  cystek
mtp4835v8.pdf pdf_icon

MTP4835Q8

Spec. No. C830V8 Issued Date 2013.01.23 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTP4835V8 ID -33A 16m (typ.) RDSON(MAX)@VGS=-10V, ID=-10A 25m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-7A Description The MTP4835V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of ... See More ⇒

 7.2. Size:335K  cystek
mtp4835l3.pdf pdf_icon

MTP4835Q8

Spec. No. C830L3 Issued Date 2013.02.01 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET MTP4835L3 BVDSS -30V ID -10A 21m (typ) RDSON@VGS=-10V, ID=-10A 28m (typ) RDSON@VGS=-5V, ID=-7A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalen... See More ⇒

 7.3. Size:305K  cystek
mtp4835aq8.pdf pdf_icon

MTP4835Q8

Spec. No. C830Q8 Issued Date 2012.09.19 CYStech Electronics Corp. Revised Date 2013.10.30 Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4835AQ8 ID -10A RDSON@VGS=-10V, ID=-10A 18m (typ) RDSON@VGS=-4.5V,ID=-6A 27m (typ) Description The MTP4835AQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s... See More ⇒

Detailed specifications: MTP4413Q8, MTP4423Q8, MTP4435V8, MTP4463Q8, MTP452L3, MTP452M3, MTP4835AQ8, MTP4835L3, 12N60, MTP4835V8, MTP5103J3, MTP5103N3, MTP5210F3, MTP5614N6, MTP6405N6, MTP658G6, MTP7425Q8

Keywords - MTP4835Q8 MOSFET specs

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