MTP4835Q8 - параметры транзистора MOSFET, его аналоги, datasheet

MTP4835Q8 Datasheet (PDF)

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Spec. No. : C830Q8 Issued Date : 2012.06.22 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4835Q8 ID -10ARDSON@VGS=-10V, ID=-10A 17m(typ)RDSON@VGS=-4.5V,ID=-6A 26m(typ)Description The MTP4835Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, rug

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Spec. No. : C830V8 Issued Date : 2013.01.23 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTP4835V8 ID -33A16m(typ.) RDSON(MAX)@VGS=-10V, ID=-10A 25m(typ.) RDSON(MAX)@VGS=-4.5V, ID=-7A Description The MTP4835V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of

7.2. Size:335K cystek
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Spec. No. : C830L3 Issued Date : 2013.02.01 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET MTP4835L3 BVDSS -30VID -10A21m (typ) RDSON@VGS=-10V, ID=-10A 28m (typ) RDSON@VGS=-5V, ID=-7A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalen

7.3. Size:305K cystek
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Spec. No. : C830Q8 Issued Date : 2012.09.19 CYStech Electronics Corp.Revised Date : 2013.10.30 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4835AQ8 ID -10ARDSON@VGS=-10V, ID=-10A 18m(typ)RDSON@VGS=-4.5V,ID=-6A 27m(typ)Description The MTP4835AQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s

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