MTP5210F3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTP5210F3

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 34 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 234 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm

Encapsulados: TO-263

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MTP5210F3 datasheet

 ..1. Size:281K  cystek
 mtp5210f3.pdf pdf_icon

MTP5210F3

Spec. No. C563F3 Issued Date 2012.12.25 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTP5210F3 ID -34A 37m VGS=-10V, ID=-20A RDSON(TYP) 42m VGS=-4.5V, ID=-18A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating and R

 9.1. Size:236K  motorola
 mtp52n06v.pdf pdf_icon

MTP5210F3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP52N06V/D Designer's Data Sheet MTP52N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 52 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

 9.2. Size:166K  motorola
 mtp52n06vlrev3.pdf pdf_icon

MTP5210F3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP52N06VL/D Designer's Data Sheet MTP52N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 52 AMPERES tance area product about one half that of standard MOSFETs. This 60 VO

 9.3. Size:240K  motorola
 mtp52n06vl.pdf pdf_icon

MTP5210F3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP52N06VL/D Designer's Data Sheet MTP52N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 52 AMPERES tance area product about one half that of standard MOSFETs. This 60 VO

MOSTRAR MÁS

Otros transistores... MTP452L3, MTP452M3, MTP4835AQ8, MTP4835L3, MTP4835Q8, MTP4835V8, MTP5103J3, MTP5103N3, AON6380, MTP5614N6, MTP6405N6, MTP658G6, MTP7425Q8, MTP9006E3, MTP9435BDYAQ8, MTP9435BDYQ8, MTP9435L3