MTP5210F3 Todos los transistores

 

MTP5210F3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTP5210F3
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 34 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 234 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
   Paquete / Cubierta: TO-263
 

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MTP5210F3 Datasheet (PDF)

 ..1. Size:281K  cystek
 mtp5210f3.pdf pdf_icon

MTP5210F3

Spec. No. : C563F3 Issued Date : 2012.12.25 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100VMTP5210F3 ID -34A37m VGS=-10V, ID=-20A RDSON(TYP) 42m VGS=-4.5V, ID=-18A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating and R

 9.1. Size:236K  motorola
 mtp52n06v.pdf pdf_icon

MTP5210F3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP52N06V/DDesigner's Data SheetMTP52N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-52 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS

 9.2. Size:166K  motorola
 mtp52n06vlrev3.pdf pdf_icon

MTP5210F3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP52N06VL/DDesigner's Data SheetMTP52N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-52 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VO

 9.3. Size:240K  motorola
 mtp52n06vl.pdf pdf_icon

MTP5210F3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP52N06VL/DDesigner's Data SheetMTP52N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-52 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VO

MOSTRAR MÁS

Otros transistores... MTP452L3 , MTP452M3 , MTP4835AQ8 , MTP4835L3 , MTP4835Q8 , MTP4835V8 , MTP5103J3 , MTP5103N3 , IRLZ44N , MTP5614N6 , MTP6405N6 , MTP658G6 , MTP7425Q8 , MTP9006E3 , MTP9435BDYAQ8 , MTP9435BDYQ8 , MTP9435L3 .

History: RUF015N02 | RUE002N05 | 2SK1268 | STI45N10F7 | 2SK2918-01 | BLP12N10G-U

 

 
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