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MTP5210F3 Spec and Replacement


   Type Designator: MTP5210F3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 234 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: TO-263

 MTP5210F3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTP5210F3 Specs

 ..1. Size:281K  cystek
mtp5210f3.pdf pdf_icon

MTP5210F3

Spec. No. C563F3 Issued Date 2012.12.25 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTP5210F3 ID -34A 37m VGS=-10V, ID=-20A RDSON(TYP) 42m VGS=-4.5V, ID=-18A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating and R... See More ⇒

 9.1. Size:236K  motorola
mtp52n06v.pdf pdf_icon

MTP5210F3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP52N06V/D Designer's Data Sheet MTP52N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 52 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS... See More ⇒

 9.2. Size:166K  motorola
mtp52n06vlrev3.pdf pdf_icon

MTP5210F3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP52N06VL/D Designer's Data Sheet MTP52N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 52 AMPERES tance area product about one half that of standard MOSFETs. This 60 VO... See More ⇒

 9.3. Size:240K  motorola
mtp52n06vl.pdf pdf_icon

MTP5210F3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP52N06VL/D Designer's Data Sheet MTP52N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 52 AMPERES tance area product about one half that of standard MOSFETs. This 60 VO... See More ⇒

Detailed specifications: MTP452L3 , MTP452M3 , MTP4835AQ8 , MTP4835L3 , MTP4835Q8 , MTP4835V8 , MTP5103J3 , MTP5103N3 , AON6380 , MTP5614N6 , MTP6405N6 , MTP658G6 , MTP7425Q8 , MTP9006E3 , MTP9435BDYAQ8 , MTP9435BDYQ8 , MTP9435L3 .

History: PHP14NQ20T | STP3NK90Z | SL5N100K | 2SK1310

Keywords - MTP5210F3 MOSFET specs

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