All MOSFET. MTP5210F3 Datasheet

 

MTP5210F3 Datasheet and Replacement


   Type Designator: MTP5210F3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 234 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: TO-263
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MTP5210F3 Datasheet (PDF)

 ..1. Size:281K  cystek
 mtp5210f3.pdf pdf_icon

MTP5210F3

Spec. No. : C563F3 Issued Date : 2012.12.25 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100VMTP5210F3 ID -34A37m VGS=-10V, ID=-20A RDSON(TYP) 42m VGS=-4.5V, ID=-18A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating and R

 9.1. Size:236K  motorola
 mtp52n06v.pdf pdf_icon

MTP5210F3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP52N06V/DDesigner's Data SheetMTP52N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-52 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS

 9.2. Size:166K  motorola
 mtp52n06vlrev3.pdf pdf_icon

MTP5210F3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP52N06VL/DDesigner's Data SheetMTP52N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-52 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VO

 9.3. Size:240K  motorola
 mtp52n06vl.pdf pdf_icon

MTP5210F3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP52N06VL/DDesigner's Data SheetMTP52N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-52 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VO

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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

Keywords - MTP5210F3 MOSFET datasheet

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