MTP5210F3 MOSFET. Datasheet pdf. Equivalent

Type Designator: MTP5210F3

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 34 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 148 nC

Rise Time (tr): 13 nS

Drain-Source Capacitance (Cd): 234 pF

Maximum Drain-Source On-State Resistance (Rds): 0.037 Ohm

Package: TO-263

MTP5210F3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MTP5210F3 Datasheet (PDF)

1.1. mtp5210f3.pdf Size:281K _cystek

Spec. No. : C563F3 Issued Date : 2012.12.25 CYStech Electronics Corp. Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTP5210F3 ID -34A 37mΩ VGS=-10V, ID=-20A RDSON(TYP) 42mΩ VGS=-4.5V, ID=-18A Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and R

5.1. mtp52n06vrev3.pdf Size:162K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP52N06V/D Designer's? Data Sheet MTP52N06V ? TMOS V Motorola Preferred Device Power Field Effect Transistor N�Channel Enhancement�Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on�resis- 52 AMPERES tance area product about one�half that of standard MOSFETs. This 60 VOLTS new technolog

5.2. mtp52n06vl.pdf Size:240K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP52N06VL/D Designer's? Data Sheet MTP52N06VL ? TMOS V Motorola Preferred Device Power Field Effect Transistor N�Channel Enhancement�Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on�resis- 52 AMPERES tance area product about one�half that of standard MOSFETs. This 60 VOLTS new techno

5.3. mtp52n06v.pdf Size:236K _motorola