AO3162 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO3162

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 0.034 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 0.45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 500 Ohm

Encapsulados: SOT23

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AO3162 datasheet

 ..1. Size:256K  aosemi
 ao3162.pdf pdf_icon

AO3162

AO3162 600V,0.034A N-Channel MOSFET General Description Product Summary The AO3162 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels VDS 700V@150 of performance and robustness in popular AC-DC ID (at VGS=10V) 0.034A applications. RDS(ON) (at VGS=10V)

 9.1. Size:550K  aosemi
 ao3160e.pdf pdf_icon

AO3162

AO3160E 600V,0.04A N-Channel MOSFET General Description Product Summary Logic Level Driving 4.5V VDS @ Tj,max 700V ESD Protection ID (at VGS=10V) 0.04A RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V)

 9.2. Size:251K  aosemi
 ao3160.pdf pdf_icon

AO3162

AO3160 600V,0.04A N-Channel MOSFET General Description Product Summary The AO3160 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels VDS 700V@150 of performance and robustness in popular AC-DC ID (at VGS=10V) 0.04A applications. RDS(ON) (at VGS=10V)

Otros transistores... MTP9435Q8, MTP9575J3, MTP9575L3, MTP9575Q8, MTP9620Q8, MTP9620V8, MTS3572G6, AO3160, SI2302, AO3400A, AO3402, AO3403, AO3404, AO3404A, AO3406, AO3407A, AO3409