AO3162 Specs and Replacement

Type Designator: AO3162

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.034 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 0.45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm

Package: SOT23

AO3162 substitution

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AO3162 datasheet

 ..1. Size:256K  aosemi
 ao3162.pdf pdf_icon

AO3162

AO3162 600V,0.034A N-Channel MOSFET General Description Product Summary The AO3162 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels VDS 700V@150 of performance and robustness in popular AC-DC ID (at VGS=10V) 0.034A applications. RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:550K  aosemi
 ao3160e.pdf pdf_icon

AO3162

AO3160E 600V,0.04A N-Channel MOSFET General Description Product Summary Logic Level Driving 4.5V VDS @ Tj,max 700V ESD Protection ID (at VGS=10V) 0.04A RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V) ... See More ⇒

 9.2. Size:251K  aosemi
 ao3160.pdf pdf_icon

AO3162

AO3160 600V,0.04A N-Channel MOSFET General Description Product Summary The AO3160 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels VDS 700V@150 of performance and robustness in popular AC-DC ID (at VGS=10V) 0.04A applications. RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: MTP9435Q8, MTP9575J3, MTP9575L3, MTP9575Q8, MTP9620Q8, MTP9620V8, MTS3572G6, AO3160, SI2302, AO3400A, AO3402, AO3403, AO3404, AO3404A, AO3406, AO3407A, AO3409

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