All MOSFET. AO3162 Datasheet

 

AO3162 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AO3162
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.1 V
   |Id|ⓘ - Maximum Drain Current: 0.034 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.1 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 0.45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm
   Package: SOT23

 AO3162 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO3162 Datasheet (PDF)

 ..1. Size:256K  aosemi
 ao3162.pdf

AO3162 AO3162

AO3162600V,0.034A N-Channel MOSFETGeneral Description Product SummaryThe AO3162 is fabricated using an advanced high voltageMOSFET process that is designed to deliver high levels VDS 700V@150of performance and robustness in popular AC-DC ID (at VGS=10V) 0.034Aapplications. RDS(ON) (at VGS=10V)

 9.1. Size:550K  aosemi
 ao3160e.pdf

AO3162 AO3162

AO3160E600V,0.04A N-Channel MOSFETGeneral Description Product Summary Logic Level Driving 4.5V VDS @ Tj,max 700V ESD Protection ID (at VGS=10V) 0.04A RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V)

 9.2. Size:251K  aosemi
 ao3160.pdf

AO3162 AO3162

AO3160600V,0.04A N-Channel MOSFETGeneral Description Product SummaryThe AO3160 is fabricated using an advanced high voltageMOSFET process that is designed to deliver high levels VDS 700V@150of performance and robustness in popular AC-DC ID (at VGS=10V) 0.04Aapplications. RDS(ON) (at VGS=10V)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NTGS3443BT1G | FQPF13N10 | FQPF13N50CT | AO4419 | NTJD4152P

 

 
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