AO4310 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4310
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 36 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 27 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4.8 nS
   Cossⓘ - Capacitancia de salida: 1130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AO4310

AO4310 Datasheet (PDF)

..1. Size:534K aosemi
ao4310.pdf

AO431036V N-Channel MOSFETGeneral Description Product SummaryVDS36VThe AO4310 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 27Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

..2. Size:2160K kexin
ao4310.pdf

SMD Type MOSFETN-Channel MOSFETAO4310 (KO4310)SOP-8 Features VDS (V) = 36V ID = 27 A (VGS = 10V) RDS(ON) 3.1m (VGS = 10V)1.50 0.15 RDS(ON) 4.2m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 SourceDD8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

9.1. Size:570K aosemi
ao4314.pdf

AO431436V N-Channel MOSFETGeneral Description Product SummaryVDS36VThe AO4314 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 20Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.2. Size:575K aosemi
ao4312.pdf

AO431236V N-Channel MOSFETGeneral Description Product SummaryVDS36VThe AO4312 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 23Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.3. Size:2238K kexin
ao4314.pdf

SMD Type MOSFETN-Channel MOSFETAO4314 (KO4314)SOP-8 Features VDS (V) = 36V1.50 0.15 ID = 20 A (VGS = 10V) RDS(ON) 6m (VGS = 10V) RDS(ON) 8.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDDGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

9.4. Size:2238K kexin
ao4312.pdf

SMD Type MOSFETN-Channel MOSFETAO4312 (KO4312)SOP-8 Features VDS (V) = 36V ID = 23 A (VGS = 10V)1.50 0.15 RDS(ON) 4.5m (VGS = 10V) RDS(ON) 6.2m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 SourceDD8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: