AO4310 Datasheet and Replacement
Type Designator: AO4310
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 36 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 1130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: SO-8
AO4310 substitution
AO4310 Datasheet (PDF)
ao4310.pdf

AO431036V N-Channel MOSFETGeneral Description Product SummaryVDS36VThe AO4310 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 27Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
ao4310.pdf

SMD Type MOSFETN-Channel MOSFETAO4310 (KO4310)SOP-8 Features VDS (V) = 36V ID = 27 A (VGS = 10V) RDS(ON) 3.1m (VGS = 10V)1.50 0.15 RDS(ON) 4.2m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 SourceDD8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 36
ao4314.pdf

AO431436V N-Channel MOSFETGeneral Description Product SummaryVDS36VThe AO4314 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 20Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
ao4312.pdf

AO431236V N-Channel MOSFETGeneral Description Product SummaryVDS36VThe AO4312 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 23Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
Datasheet: AO4240 , AO4260 , AO4264 , AO4266 , AO4286 , AO4292 , AO4302 , AO4304 , IRF840 , AO4312 , AO4314 , AO4354 , AO4402 , AO4403 , AO4404B , AO4405 , AO4406A .
Keywords - AO4310 MOSFET datasheet
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