AO4310
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4310
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 36
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 27
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16
nC
trⓘ - Rise Time: 4.8
nS
Cossⓘ -
Output Capacitance: 1130
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0031
Ohm
Package:
SO-8
AO4310
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4310
Datasheet (PDF)
..1. Size:534K aosemi
ao4310.pdf
AO431036V N-Channel MOSFETGeneral Description Product SummaryVDS36VThe AO4310 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 27Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
..2. Size:2160K kexin
ao4310.pdf
SMD Type MOSFETN-Channel MOSFETAO4310 (KO4310)SOP-8 Features VDS (V) = 36V ID = 27 A (VGS = 10V) RDS(ON) 3.1m (VGS = 10V)1.50 0.15 RDS(ON) 4.2m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 SourceDD8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 36
9.1. Size:570K aosemi
ao4314.pdf
AO431436V N-Channel MOSFETGeneral Description Product SummaryVDS36VThe AO4314 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 20Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.2. Size:575K aosemi
ao4312.pdf
AO431236V N-Channel MOSFETGeneral Description Product SummaryVDS36VThe AO4312 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 23Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.3. Size:2238K kexin
ao4314.pdf
SMD Type MOSFETN-Channel MOSFETAO4314 (KO4314)SOP-8 Features VDS (V) = 36V1.50 0.15 ID = 20 A (VGS = 10V) RDS(ON) 6m (VGS = 10V) RDS(ON) 8.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDDGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 36
9.4. Size:2238K kexin
ao4312.pdf
SMD Type MOSFETN-Channel MOSFETAO4312 (KO4312)SOP-8 Features VDS (V) = 36V ID = 23 A (VGS = 10V)1.50 0.15 RDS(ON) 4.5m (VGS = 10V) RDS(ON) 6.2m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 SourceDD8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 36
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