All MOSFET. AO4310 Datasheet

 

AO4310 MOSFET. Datasheet pdf. Equivalent

Type Designator: AO4310

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3.6 W

Maximum Drain-Source Voltage |Vds|: 36 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.3 V

Maximum Drain Current |Id|: 27 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 4.8 nS

Drain-Source Capacitance (Cd): 1130 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0031 Ohm

Package: SO-8

AO4310 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO4310 Datasheet (PDF)

1.1. ao4310.pdf Size:534K _aosemi

AO4310
AO4310

AO4310 36V N-Channel MOSFET General Description Product Summary VDS 36V The AO4310 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 27A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 3.1mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 4.2mΩ RDS(ON) and Crss.In addi

1.2. ao4310.pdf Size:2160K _kexin

AO4310
AO4310

SMD Type MOSFET N-Channel MOSFET AO4310 (KO4310) SOP-8 ■ Features ● VDS (V) = 36V ● ID = 27 A (VGS = 10V) ● RDS(ON) < 3.1mΩ (VGS = 10V) 1.50 0.15 ● RDS(ON) < 4.2mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source D D 8 Drain 4 Gate G G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

 5.1. ao4314.pdf Size:570K _aosemi

AO4310
AO4310

AO4314 36V N-Channel MOSFET General Description Product Summary VDS 36V The AO4314 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 20A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 6mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 8.5mΩ RDS(ON) and Crss.In additi

5.2. ao4312.pdf Size:575K _aosemi

AO4310
AO4310

AO4312 36V N-Channel MOSFET General Description Product Summary VDS 36V The AO4312 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 23A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 4.5mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 6.2mΩ RDS(ON) and Crss.In addi

 5.3. ao4314.pdf Size:2238K _kexin

AO4310
AO4310

SMD Type MOSFET N-Channel MOSFET AO4314 (KO4314) SOP-8 ■ Features ● VDS (V) = 36V 1.50 0.15 ● ID = 20 A (VGS = 10V) ● RDS(ON) < 6mΩ (VGS = 10V) ● RDS(ON) < 8.5mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D D G G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

5.4. ao4312.pdf Size:2238K _kexin

AO4310
AO4310

SMD Type MOSFET N-Channel MOSFET AO4312 (KO4312) SOP-8 ■ Features ● VDS (V) = 36V ● ID = 23 A (VGS = 10V) 1.50 0.15 ● RDS(ON) < 4.5mΩ (VGS = 10V) ● RDS(ON) < 6.2mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source D D 8 Drain 4 Gate G G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

Datasheet: AO4240 , AO4260 , AO4264 , AO4266 , AO4286 , AO4292 , AO4302 , AO4304 , IRF540 , AO4312 , AO4314 , AO4354 , AO4402 , AO4403 , AO4404B , AO4405 , AO4406A .

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