AO4468 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4468
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 7.5 nC
   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: SO-8

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AO4468 Datasheet (PDF)

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ao4468.pdf

AO446830V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4468 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 10.5Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

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ao4468.pdf

SMD Type MOSFETN-Channel MOSFETAO4468 (KO4468)SOP-8 Features VDS (V) = 30V1.50 0.15 ID = 10.5 A (VGS = 10V) RDS(ON) 17m (VGS = 10V)1 Source 5 Drain RDS(ON) 23m (VGS = 4.5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gat

9.1. Size:324K aosemi
ao4466.pdf

AO446630V N-Channel MOSFETGeneral Description Product SummaryThe AO4466 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V)device is suitable for use as a load switch or in PWM RDS(ON)

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ao4466l.pdf

AO4466N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4466/L uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. ThisID = 9.4A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)

9.3. Size:1389K kexin
ao4466.pdf

SMD Type MOSFETN-Channel MOSFETAO4466 (KO4466)SOP-8 Features VDS (V) = 30V ID = 9.4 A (VGS = 10V)1.50 0.15 RDS(ON) 23m (VGS = 10V) RDS(ON) 35m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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