AO4468
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4468
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 10.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.5
nC
trⓘ - Rise Time: 3.5
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017
Ohm
Package:
SO-8
AO4468
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4468
Datasheet (PDF)
..1. Size:315K aosemi
ao4468.pdf 
AO446830V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4468 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 10.5Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
..2. Size:1303K kexin
ao4468.pdf
SMD Type MOSFETN-Channel MOSFETAO4468 (KO4468)SOP-8 Features VDS (V) = 30V1.50 0.15 ID = 10.5 A (VGS = 10V) RDS(ON) 17m (VGS = 10V)1 Source 5 Drain RDS(ON) 23m (VGS = 4.5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gat
9.1. Size:324K aosemi
ao4466.pdf
AO446630V N-Channel MOSFETGeneral Description Product SummaryThe AO4466 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V)device is suitable for use as a load switch or in PWM RDS(ON)
9.2. Size:199K aosemi
ao4466l.pdf
AO4466N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4466/L uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. ThisID = 9.4A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)
9.3. Size:1389K kexin
ao4466.pdf
SMD Type MOSFETN-Channel MOSFETAO4466 (KO4466)SOP-8 Features VDS (V) = 30V ID = 9.4 A (VGS = 10V)1.50 0.15 RDS(ON) 23m (VGS = 10V) RDS(ON) 35m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate
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