AO4468 Specs and Replacement
Type Designator: AO4468
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SO-8
AO4468 substitution
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AO4468 datasheet
ao4468.pdf
AO4468 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 10.5A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒
ao4468.pdf
SMD Type MOSFET N-Channel MOSFET AO4468 (KO4468) SOP-8 Features VDS (V) = 30V 1.50 0.15 ID = 10.5 A (VGS = 10V) RDS(ON) 17m (VGS = 10V) 1 Source 5 Drain RDS(ON) 23m (VGS = 4.5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gat... See More ⇒
ao4466.pdf
AO4466 30V N-Channel MOSFET General Description Product Summary The AO4466 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON) ... See More ⇒
ao4466l.pdf
AO4466 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4466/L uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 9.4A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON) ... See More ⇒
Detailed specifications: AO4449, AO4450, AO4452, AO4453, AO4454, AO4455, AO4459, AO4466, 5N65, AO4476A, AO4478, AO4480, AO4482, AO4484, AO4485, AO4486, AO4488
Keywords - AO4468 MOSFET specs
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