AO4494 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO4494

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.5 nS

Cossⓘ - Capacitancia de salida: 240 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm

Encapsulados: SO-8

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AO4494 datasheet

 ..1. Size:187K  aosemi
ao4494.pdf pdf_icon

AO4494

AO4494 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V The AO4494 combines advanced trench MOSFET technology with a low resistance package to provide ID = 18A (VGS = 10V) extremely low RDS(ON). This device is for PWM RDS(ON)

 ..2. Size:1248K  kexin
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AO4494

SMD Type MOSFET N-Channel MOSFET AO4494 (KO4494) SOP-8 Unit mm Features VDS (V) = 30V ID = 18 A (VGS = 10V) 1.50 0.15 RDS(ON) 6.5m (VGS = 10V) RDS(ON) 9.5m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

 9.1. Size:293K  aosemi
ao4496.pdf pdf_icon

AO4494

AO4496 General Description Product Summary The AO4496 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) with low gate charge. This ID = 10A (VGS = 10V) device is suitable for use as a DC-DC converter RDS(ON)

 9.2. Size:187K  aosemi
ao4490.pdf pdf_icon

AO4494

AO4490 30V N-Channel MOSFET General Description Product Summary The AO4490 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and ID = 16A (VGS = 10V) operation with gate voltages as low as 4.5V, while RDS(ON)

Otros transistores... AO4478, AO4480, AO4482, AO4484, AO4485, AO4486, AO4488, AO4490, TK10A60D, AO4496, AO4498, AO4498E, AO4566, AO4568, AO4576, AO4578, AO4588