AO4494
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Наименование прибора: AO4494
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.1
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 18
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 12
nC
trⓘ -
Время нарастания: 3.5
ns
Cossⓘ - Выходная емкость: 240
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065
Ohm
Тип корпуса:
SO-8
Аналог (замена) для AO4494
AO4494
Datasheet (PDF)
..1. Size:187K aosemi
ao4494.pdf 
AO449430V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AO4494 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 18A (VGS = 10V)extremely low RDS(ON). This device is for PWMRDS(ON)
..2. Size:1248K kexin
ao4494.pdf 
SMD Type MOSFETN-Channel MOSFETAO4494 (KO4494)SOP-8 Unit:mm Features VDS (V) = 30V ID = 18 A (VGS = 10V)1.50 0.15 RDS(ON) 6.5m (VGS = 10V) RDS(ON) 9.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30
9.1. Size:293K aosemi
ao4496.pdf 
AO4496General Description Product SummaryThe AO4496 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) with low gate charge. This ID = 10A (VGS = 10V)device is suitable for use as a DC-DC converter RDS(ON)
9.2. Size:187K aosemi
ao4490.pdf 
AO449030V N-Channel MOSFETGeneral Description Product SummaryThe AO4490 uses advanced trench technology toVDS (V) = 30Vprovide excellent RDS(ON), low gate charge andID = 16A (VGS = 10V)operation with gate voltages as low as 4.5V, whileRDS(ON)
9.3. Size:261K aosemi
ao4498e.pdf 
AO4498E30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4498E combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 18Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
9.4. Size:185K aosemi
ao4498.pdf 
AO449830V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AO4498 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 18A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
9.5. Size:1040K aosemi
ao4492.pdf 
AO449230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4492 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 14Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
9.6. Size:1690K kexin
ao4496.pdf 
SMD Type MOSFETN-Channel MOSFETAO4496 (KO4496)SOP-8 Unit:mm Features VDS (V) = 30V ID = 10 A (VGS = 10V)1.50 0.15 RDS(ON) 19.5m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30
9.7. Size:1159K kexin
ao4490.pdf 
SMD Type MOSFETN-Channel MOSFETAO4490 (KO4490)SOP-8Unit:mm Features VDS (V) = 30V ID = 16 A (VGS = 10V)1.50 0.15 RDS(ON) 7.2m (VGS = 10V) RDS(ON) 10m (VGS = 4.5V) ESD Rating: 2KV HBM 1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateD G S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
9.8. Size:1373K kexin
ao4498e.pdf 
SMD Type MOSFETN-Channel MOSFETAO4498E (KO4498E)SOP-8 Unit:mm Features VDS (V) = 30V ID = 18 A (VGS = 10V) RDS(ON) 5.8m (VGS = 10V)1.50 0.15 RDS(ON) 8.5m (VGS = 4.5V) ESD Rating: 2KV HBM1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
9.9. Size:1411K kexin
ao4498.pdf 
SMD Type MOSFETN-Channel MOSFETAO4498 (KO4498)SOP-8 Unit:mm Features VDS (V) = 30V ID = 18 A (VGS = 10V)1.50 0.15 RDS(ON) 5.5m (VGS = 10V) RDS(ON) 7.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30
9.10. Size:2037K kexin
ao4492.pdf 
SMD Type MOSFETN-Channel MOSFETAO4492 (KO4492)SOP-8 Unit:mm Features VDS (V) = 30V ID = 14 A (VGS = 10V)1.50 0.15 RDS(ON) 9.5m (VGS = 10V) RDS(ON) 14m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDDG GSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltag
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