AO4494 Datasheet and Replacement
Type Designator: AO4494
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 240 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: SO-8
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AO4494 Datasheet (PDF)
ao4494.pdf

AO449430V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AO4494 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 18A (VGS = 10V)extremely low RDS(ON). This device is for PWMRDS(ON)
ao4494.pdf

SMD Type MOSFETN-Channel MOSFETAO4494 (KO4494)SOP-8 Unit:mm Features VDS (V) = 30V ID = 18 A (VGS = 10V)1.50 0.15 RDS(ON) 6.5m (VGS = 10V) RDS(ON) 9.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30
ao4496.pdf

AO4496General Description Product SummaryThe AO4496 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) with low gate charge. This ID = 10A (VGS = 10V)device is suitable for use as a DC-DC converter RDS(ON)
ao4490.pdf

AO449030V N-Channel MOSFETGeneral Description Product SummaryThe AO4490 uses advanced trench technology toVDS (V) = 30Vprovide excellent RDS(ON), low gate charge andID = 16A (VGS = 10V)operation with gate voltages as low as 4.5V, whileRDS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SM4927BSKC | BUZ84 | IRLR024 | AON6794 | GSM7002J | CED05N8 | BL10N70-A
Keywords - AO4494 MOSFET datasheet
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History: SM4927BSKC | BUZ84 | IRLR024 | AON6794 | GSM7002J | CED05N8 | BL10N70-A



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