AO4706 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4706
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 16.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 27 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 520 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AO4706

AO4706 Datasheet (PDF)

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ao4706.pdf

AO470630V N-Channel MOSFETSRFET TM General Description Product SummaryTMSRFET The AO4706 uses advanced trenchVDS (V) = 30Vtechnology with a monolithically integrated SchottkyID =16.5A (VGS = 10V)diode to provide excellent RDS(ON),and low gatecharge. This device is suitable for use as a low side RDS(ON)

..2. Size:1903K kexin
ao4706.pdf

SMD Type MOSFET N-Channel MOSFETAO4706 (KO4706)SOP-8 Unit:mm Features VDS (V) = 30V ID = 16.5 A (VGS = 10V)1.50 0.15 RDS(ON) 6.8m (VGS = 10V) RDS(ON) 8.2m (VGS = 4.5V)1 Source 5 DrainSRFETTM Soft Recovery MOSFET:Integrated Schottky Diode 6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25

9.1. Size:137K aosemi
ao4702.pdf

AO4702N-Channel Enhancement Mode Field Effect Transistor with Schottky DiodeGeneral DescriptionFeaturesThe AO4702 uses advanced trench technology to provide VDS (V) = 30Vexcellent RDS(ON) and low gate charge. A Schottky Diode is ID = 11A (VGS = 10V)packaged in parallel to improve device performance in RDS(ON)

9.2. Size:191K aosemi
ao4708.pdf

AO470830V N-Channel MOSFETSRFET TM General Description Product SummaryTMSRFET AO4708 uses advanced trench technologyVDS (V) = 30Vwith a monolithically integrated Schottky diode toID =15A (VGS = 10V)provide excellent RDS(ON),and low gate charge. Thisdevice is suitable for use as a low side FET in SMPS, RDS(ON)

9.3. Size:1573K kexin
ao4702.pdf

SMD Type MOSFET N-Channel MOSFETAO4702 (KO4702)SOP-8 Unit:mm Features VDS (V) = 30V ID = 11 A (VGS = 10V) 1.50 0.15 RDS(ON) 16m (VGS = 10V) RDS(ON) 25m (VGS = 4.5V)1 S/A 8 D/K2 S/A 7 D/K VDS (V) = 30V, IF = 3A, VF

9.4. Size:1757K kexin
ao4705.pdf

SMD Type MOSFET P-Channel MOSFETAO4705 (KO4705)SOP-8 Unit:mm Features VDS (V) = -30V ID = -10 A (VGS = -10V) 0.151.50 RDS(ON) 14m (VGS = 20V)5 D/K RDS(ON) 16m (VGS = -10V) 1 A6 D/K2 S VDS (V) = 30V, IF = 5A, VF

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ao4704.pdf

SMD Type MOSFET N-Channel MOSFETAO4704 (KO4704)SOP-8 Unit:mm Features VDS (V) = 30V ID = 13 A (VGS = 10V) RDS(ON) 11.5m (VGS = 10V)1.50 0.15 RDS(ON) 13m (VGS = 4.5V) VDS (V) = 30V, IF = 3A, VF

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