AO4706 Todos los transistores

 ..1. Size:207K  aosemi
 ao4706.pdf

AO4706 30V N-Channel MOSFET SRFET TM General Description Product Summary TM SRFET The AO4706 uses advanced trench VDS (V) = 30V technology with a monolithically integrated Schottky ID =16.5A (VGS = 10V) diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side RDS(ON)

 ..2. Size:1903K  kexin
 ao4706.pdf

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 ao4702.pdf

AO4702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4702 uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON) and low gate charge. A Schottky Diode is ID = 11A (VGS = 10V) packaged in parallel to improve device performance in RDS(ON)

 9.2. Size:191K  aosemi
 ao4708.pdf

AO4708 30V N-Channel MOSFET SRFET TM General Description Product Summary TM SRFET AO4708 uses advanced trench technology VDS (V) = 30V with a monolithically integrated Schottky diode to ID =15A (VGS = 10V) provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, RDS(ON)

 9.3. Size:1573K  kexin
 ao4702.pdf

SMD Type MOSFET N-Channel MOSFET AO4702 (KO4702) SOP-8 Unit mm Features VDS (V) = 30V ID = 11 A (VGS = 10V) 1.50 0.15 RDS(ON) 16m (VGS = 10V) RDS(ON) 25m (VGS = 4.5V) 1 S/A 8 D/K 2 S/A 7 D/K VDS (V) = 30V, IF = 3A, VF

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 ao4705.pdf

SMD Type MOSFET P-Channel MOSFET AO4705 (KO4705) SOP-8 Unit mm Features VDS (V) = -30V ID = -10 A (VGS = -10V) 0.15 1.50 RDS(ON) 14m (VGS = 20V) 5 D/K RDS(ON) 16m (VGS = -10V) 1 A 6 D/K 2 S VDS (V) = 30V, IF = 5A, VF

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 ao4704.pdf

SMD Type MOSFET N-Channel MOSFET AO4704 (KO4704) SOP-8 Unit mm Features VDS (V) = 30V ID = 13 A (VGS = 10V) RDS(ON) 11.5m (VGS = 10V) 1.50 0.15 RDS(ON) 13m (VGS = 4.5V) VDS (V) = 30V, IF = 3A, VF