AO4706 MOSFET Datasheet: N-Ch, 30V, 16.5A. Full specification with pinout and replacement list

AO4706 Specs and Replacement

Type Designator: AO4706

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 16.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: SO-8

AO4706 substitution

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AO4706 datasheet

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AO4706 30V N-Channel MOSFET SRFET TM General Description Product Summary TM SRFET The AO4706 uses advanced trench VDS (V) = 30V technology with a monolithically integrated Schottky ID =16.5A (VGS = 10V) diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side RDS(ON) ... See More ⇒

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AO4702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4702 uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON) and low gate charge. A Schottky Diode is ID = 11A (VGS = 10V) packaged in parallel to improve device performance in RDS(ON) ... See More ⇒

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AO4708 30V N-Channel MOSFET SRFET TM General Description Product Summary TM SRFET AO4708 uses advanced trench technology VDS (V) = 30V with a monolithically integrated Schottky diode to ID =15A (VGS = 10V) provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, RDS(ON) ... See More ⇒