AO4710 Todos los transistores

 

AO4710 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AO4710
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 12.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.5 nS
   Cossⓘ - Capacitancia de salida: 317 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0118 Ohm
   Paquete / Cubierta: SO-8
     - Selección de transistores por parámetros

 

AO4710 Datasheet (PDF)

 ..1. Size:206K  aosemi
ao4710.pdf pdf_icon

AO4710

AO471030V N-Channel MOSFETSRFET TM General Description Product SummaryTMSRFET The AO4710 uses advanced trenchVDS (V) = 30Vtechnology with a monolithically integrated SchottkyID =12.7A (VGS = 10V)diode to provide excellent RDS(ON), and low gatecharge. This device is suitable for use as a low side RDS(ON)

 ..2. Size:1858K  kexin
ao4710.pdf pdf_icon

AO4710

SMD Type MOSFET N-Channel MOSFETAO4710 (KO4710)SOP-8 Unit:mm Features VDS (V) = 30V1.50 0.15 ID = 12.7 A (VGS = 10V) RDS(ON) 11.8m (VGS = 10V) RDS(ON) 14.2m (VGS = 4.5V)1 Source 5 Drain6 Drain2 SourceSRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta =

 9.1. Size:278K  aosemi
ao4712.pdf pdf_icon

AO4710

AO471230V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AO4712 uses advanced trench technology with ID (at VGS=10V) 13Aa monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 9.2. Size:187K  aosemi
ao4718.pdf pdf_icon

AO4710

AO471830V N-Channel MOSFETSRFET TM General Description FeaturesTMSRFET The AO4718 uses advanced trenchVDS (V) = 30Vtechnology with a monolithically integratedID =15A (VGS = 10V)Schottky diode to provide excellent RDS(ON),andlow gate charge. This device is suitable for use RDS(ON)

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SI7463ADP | AOLF66610 | VS3618AE | 2SK1336 | WSD4066DN | CSD17310Q5A | IPP26CN10N

 

 
Back to Top

 


 
.