AO4710 MOSFET Datasheet: N-Ch, 30V, 12.7A. Full specification with pinout and replacement list

AO4710 Specs and Replacement

   Type Designator: AO4710
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 12.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 317 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0118 Ohm
   Package: SO-8

AO4710 substitution

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AO4710 datasheet

..1. Size:206K aosemi
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AO4710 30V N-Channel MOSFET SRFET TM General Description Product Summary TM SRFET The AO4710 uses advanced trench VDS (V) = 30V technology with a monolithically integrated Schottky ID =12.7A (VGS = 10V) diode to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a low side RDS(ON) ... See More ⇒

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SMD Type MOSFET N-Channel MOSFET AO4710 (KO4710) SOP-8 Unit mm Features VDS (V) = 30V 1.50 0.15 ID = 12.7 A (VGS = 10V) RDS(ON) 11.8m (VGS = 10V) RDS(ON) 14.2m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source SRFETTM Soft Recovery MOSFET Integrated Schottky Diode 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = ... See More ⇒

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AO4712 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AO4712 uses advanced trench technology with ID (at VGS=10V) 13A a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V) ... See More ⇒

9.2. Size:187K aosemi
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AO4718 30V N-Channel MOSFET SRFET TM General Description Features TM SRFET The AO4718 uses advanced trench VDS (V) = 30V technology with a monolithically integrated ID =15A (VGS = 10V) Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use RDS(ON) ... See More ⇒