AO4710 Datasheet and Replacement
Type Designator: AO4710
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 12.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 317 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0118 Ohm
Package: SO-8
AO4710 Datasheet (PDF)
ao4710.pdf

AO471030V N-Channel MOSFETSRFET TM General Description Product SummaryTMSRFET The AO4710 uses advanced trenchVDS (V) = 30Vtechnology with a monolithically integrated SchottkyID =12.7A (VGS = 10V)diode to provide excellent RDS(ON), and low gatecharge. This device is suitable for use as a low side RDS(ON)
ao4710.pdf

SMD Type MOSFET N-Channel MOSFETAO4710 (KO4710)SOP-8 Unit:mm Features VDS (V) = 30V1.50 0.15 ID = 12.7 A (VGS = 10V) RDS(ON) 11.8m (VGS = 10V) RDS(ON) 14.2m (VGS = 4.5V)1 Source 5 Drain6 Drain2 SourceSRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta =
ao4712.pdf

AO471230V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AO4712 uses advanced trench technology with ID (at VGS=10V) 13Aa monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
ao4718.pdf

AO471830V N-Channel MOSFETSRFET TM General Description FeaturesTMSRFET The AO4718 uses advanced trenchVDS (V) = 30Vtechnology with a monolithically integratedID =15A (VGS = 10V)Schottky diode to provide excellent RDS(ON),andlow gate charge. This device is suitable for use RDS(ON)
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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