AO4801A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4801A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm
   Paquete / Cubierta: SO-8

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AO4801A Datasheet (PDF)

..1. Size:274K aosemi
ao4801a.pdf

AO4801A30V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4801A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -5Aextremely low RDS(ON).This device is suitable for use as a RDS(ON) (at VGS=-10V)

..2. Size:1113K kexin
ao4801a.pdf

SMD Type MOSFETDual P-Channel MOSFETAO4801A (KO4801A)SOP-8 Unit:mm Features VDS (V) = -30V ID = -5 A (VGS = -10V)1.50 0.15 RDS(ON) 48m (VGS = -10V) RDS(ON) 57m (VGS = -4.5V)1 S2 5 D1 RDS(ON) 80m (VGS = -2.5V)6 D12 G27 D23 S18 D24 G1D2D1G1G2S1S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

8.1. Size:274K aosemi
ao4801.pdf

AO480130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4801 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -5Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

8.2. Size:1538K kexin
ao4801.pdf

SMD Type MOSFETDual P-Channel MOSFETAO4801 (KO4801)SOP-8 Unit:mm Features VDS (V) = -30V ID = -5 A (VGS = -10V)1.50 0.15 RDS(ON) 48m (VGS = -10V) RDS(ON) 57m (VGS = -4.5V) RDS(ON) 80m (VGS = -2.5V) 1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D2D1G2G1S2S1 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating U

8.3. Size:864K cn vbsemi
ao4801.pdf

AO4801www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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