AO4801A
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4801A
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5
nC
trⓘ - Rise Time: 3.5
nS
Cossⓘ -
Output Capacitance: 80
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048
Ohm
Package:
SO-8
AO4801A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4801A
Datasheet (PDF)
..1. Size:274K aosemi
ao4801a.pdf
AO4801A30V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4801A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -5Aextremely low RDS(ON).This device is suitable for use as a RDS(ON) (at VGS=-10V)
..2. Size:1113K kexin
ao4801a.pdf
SMD Type MOSFETDual P-Channel MOSFETAO4801A (KO4801A)SOP-8 Unit:mm Features VDS (V) = -30V ID = -5 A (VGS = -10V)1.50 0.15 RDS(ON) 48m (VGS = -10V) RDS(ON) 57m (VGS = -4.5V)1 S2 5 D1 RDS(ON) 80m (VGS = -2.5V)6 D12 G27 D23 S18 D24 G1D2D1G1G2S1S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin
8.1. Size:274K aosemi
ao4801.pdf
AO480130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4801 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -5Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)
8.2. Size:1538K kexin
ao4801.pdf
SMD Type MOSFETDual P-Channel MOSFETAO4801 (KO4801)SOP-8 Unit:mm Features VDS (V) = -30V ID = -5 A (VGS = -10V)1.50 0.15 RDS(ON) 48m (VGS = -10V) RDS(ON) 57m (VGS = -4.5V) RDS(ON) 80m (VGS = -2.5V) 1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D2D1G2G1S2S1 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating U
8.3. Size:864K cn vbsemi
ao4801.pdf
AO4801www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View
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