AO4801A30V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4801A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -5Aextremely low RDS(ON).This device is suitable for use as a RDS(ON) (at VGS=-10V)

SMD Type MOSFETDual P-Channel MOSFETAO4801A (KO4801A)SOP-8 Unit:mm Features VDS (V) = -30V ID = -5 A (VGS = -10V)1.50 0.15 RDS(ON) 48m (VGS = -10V) RDS(ON) 57m (VGS = -4.5V)1 S2 5 D1 RDS(ON) 80m (VGS = -2.5V)6 D12 G27 D23 S18 D24 G1D2D1G1G2S1S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

AO480130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4801 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -5Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

SMD Type MOSFETDual P-Channel MOSFETAO4801 (KO4801)SOP-8 Unit:mm Features VDS (V) = -30V ID = -5 A (VGS = -10V)1.50 0.15 RDS(ON) 48m (VGS = -10V) RDS(ON) 57m (VGS = -4.5V) RDS(ON) 80m (VGS = -2.5V) 1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D2D1G2G1S2S1 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating U

AO4801www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View