AO4818B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4818B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AO4818B

AO4818B Datasheet (PDF)

..1. Size:299K aosemi
ao4818b.pdf

AO4818B30V Dual N-channel MOSFETGeneral Description Product SummaryVDS30VThe AO4818B uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 8Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V)

..2. Size:2038K kexin
ao4818b.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4818B (KO4818B)SOP-8 Unit:mm Features VDS (V) = 30V ID = 8A (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V)1 S2 5 D1 ESD Rating: 2KV HBM6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

8.1. Size:207K aosemi
ao4818.pdf

AO481830V Dual N-channel MOSFETGeneral Description Product SummaryVDS30VThe AO4818 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device is ID (at VGS=10V) 8Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

8.2. Size:1430K kexin
ao4818.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4818 (KO4818)SOP-8 Unit:mm Features VDS (V) = 30V ID = 8A (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 23m (VGS = 4.5V)1 S2 5 D1 ESD Rating: 2KV HBM6 D12 G27 D23 S18 D24 G1D1D2G1G2S1S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sourc

8.3. Size:879K cn vbsemi
ao4818.pdf

AO4818www.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-8 S D

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