AO4818B
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4818B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 8.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6
nC
trⓘ - Rise Time: 3.5
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019
Ohm
Package:
SO-8
AO4818B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4818B
Datasheet (PDF)
..1. Size:299K aosemi
ao4818b.pdf
AO4818B30V Dual N-channel MOSFETGeneral Description Product SummaryVDS30VThe AO4818B uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 8Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V)
..2. Size:2038K kexin
ao4818b.pdf
SMD Type MOSFETDual N-Channel MOSFETAO4818B (KO4818B)SOP-8 Unit:mm Features VDS (V) = 30V ID = 8A (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V)1 S2 5 D1 ESD Rating: 2KV HBM6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source
8.1. Size:207K aosemi
ao4818.pdf
AO481830V Dual N-channel MOSFETGeneral Description Product SummaryVDS30VThe AO4818 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device is ID (at VGS=10V) 8Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=10V)
8.2. Size:1430K kexin
ao4818.pdf
SMD Type MOSFETDual N-Channel MOSFETAO4818 (KO4818)SOP-8 Unit:mm Features VDS (V) = 30V ID = 8A (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 23m (VGS = 4.5V)1 S2 5 D1 ESD Rating: 2KV HBM6 D12 G27 D23 S18 D24 G1D1D2G1G2S1S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sourc
8.3. Size:879K cn vbsemi
ao4818.pdf
AO4818www.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-8 S D
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