AO4830 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4830
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 2.2 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AO4830

AO4830 Datasheet (PDF)

..1. Size:182K aosemi
ao4830.pdf

AO483080V Dual N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 80VThe AO4830 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge . ThisID = 3.5A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)

..2. Size:1327K kexin
ao4830.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4830 (KO4830)SOP-8 Unit:mm Features VDS (V) = 80V ID = 3.5A (VGS = 10V)1.50 0.15 RDS(ON) 75m (VGS = 10V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 80V Gate-Source Voltage VGS 30 TA=25 3.

9.1. Size:598K aosemi
ao4838.pdf

AO483830V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4838 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 11Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

9.2. Size:546K aosemi
ao4832.pdf

AO483230V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4832 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. ID (at VGS=10V) 10AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)

9.3. Size:2288K kexin
ao4838.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4838 (KO4838)SOP-8 Unit:mm Features VDS (V) = 30V1.50 0.15 ID = 11A (VGS = 10V) RDS(ON) 9.6m (VGS = 10V) 1 S2 5 D1 RDS(ON) 13m (VGS = 4.5V)6 D12 G27 D23 S18 D24 G1D1 D2D1 D2G1 G2G1 G2S1 S2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volt

9.4. Size:1980K kexin
ao4832.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4832 (KO4832)SOP-8 Unit:mm Features VDS (V) = 30V1.50 0.15 ID = 10A (VGS = 10V) RDS(ON) 13m (VGS = 10V)1 S2 5 D1 RDS(ON) 17.5m (VGS = 4.5V)6 D12 G27 D23 S18 D24 G1D1 D2D1 D2G1 G2G1 G2S1 S2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Vol

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