AO4830 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO4830  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.2 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: SO-8

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AO4830 datasheet

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AO4830

AO4830 80V Dual N-Channel MOSFET General Description Product Summary VDS (V) = 80V The AO4830 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This ID = 3.5A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)

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AO4830

SMD Type MOSFET Dual N-Channel MOSFET AO4830 (KO4830) SOP-8 Unit mm Features VDS (V) = 80V ID = 3.5A (VGS = 10V) 1.50 0.15 RDS(ON) 75m (VGS = 10V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 30 TA=25 3.

 9.1. Size:598K  aosemi
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AO4830

AO4838 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4838 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 11A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 9.2. Size:546K  aosemi
ao4832.pdf pdf_icon

AO4830

AO4832 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 10A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)

Otros transistores... AO4817, AO4818, AO4818B, AO4821, AO4822, AO4822A, AO4826, AO4828, IRF1404, AO4832, AO4838, AO4840, AO4842, AO4850, AO4852, AO4854, AO4862