AO4830 Specs and Replacement
Type Designator: AO4830
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.2 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: SO-8
AO4830 substitution
- MOSFET ⓘ Cross-Reference Search
AO4830 datasheet
ao4830.pdf
AO4830 80V Dual N-Channel MOSFET General Description Product Summary VDS (V) = 80V The AO4830 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This ID = 3.5A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON) ... See More ⇒
ao4830.pdf
SMD Type MOSFET Dual N-Channel MOSFET AO4830 (KO4830) SOP-8 Unit mm Features VDS (V) = 80V ID = 3.5A (VGS = 10V) 1.50 0.15 RDS(ON) 75m (VGS = 10V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 30 TA=25 3.... See More ⇒
ao4838.pdf
AO4838 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4838 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 11A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒
ao4832.pdf
AO4832 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 10A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AO4817, AO4818, AO4818B, AO4821, AO4822, AO4822A, AO4826, AO4828, IRF540N, AO4832, AO4838, AO4840, AO4842, AO4850, AO4852, AO4854, AO4862
Keywords - AO4830 MOSFET specs
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