AO4838 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO4838
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 180 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0096 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de AO4838 MOSFET
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AO4838 datasheet
ao4838.pdf
AO4838 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4838 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 11A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
ao4838.pdf
SMD Type MOSFET Dual N-Channel MOSFET AO4838 (KO4838) SOP-8 Unit mm Features VDS (V) = 30V 1.50 0.15 ID = 11A (VGS = 10V) RDS(ON) 9.6m (VGS = 10V) 1 S2 5 D1 RDS(ON) 13m (VGS = 4.5V) 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 D1 D2 G1 G2 G1 G2 S1 S2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volt
ao4830.pdf
AO4830 80V Dual N-Channel MOSFET General Description Product Summary VDS (V) = 80V The AO4830 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This ID = 3.5A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)
ao4832.pdf
AO4832 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 10A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)
Otros transistores... AO4818B, AO4821, AO4822, AO4822A, AO4826, AO4828, AO4830, AO4832, 50N06, AO4840, AO4842, AO4850, AO4852, AO4854, AO4862, AO4882, AO4884
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