AO4838 MOSFET Datasheet: N-Ch, 30V, 11A. Full specification with pinout and replacement list

AO4838 Specs and Replacement

   Type Designator: AO4838
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
   Package: SO-8

AO4838 substitution

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AO4838 datasheet

..1. Size:598K aosemi
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AO4838 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4838 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 11A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒

..2. Size:2288K kexin
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SMD Type MOSFET Dual N-Channel MOSFET AO4838 (KO4838) SOP-8 Unit mm Features VDS (V) = 30V 1.50 0.15 ID = 11A (VGS = 10V) RDS(ON) 9.6m (VGS = 10V) 1 S2 5 D1 RDS(ON) 13m (VGS = 4.5V) 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 D1 D2 G1 G2 G1 G2 S1 S2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volt... See More ⇒

9.1. Size:182K aosemi
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AO4830 80V Dual N-Channel MOSFET General Description Product Summary VDS (V) = 80V The AO4830 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This ID = 3.5A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON) ... See More ⇒

9.2. Size:546K aosemi
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AO4832 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 10A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V) ... See More ⇒