AO4850 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4850
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 3.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3.4 nS
   Cossⓘ - Capacitancia de salida: 54 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AO4850

AO4850 Datasheet (PDF)

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ao4850.pdf

AO4850Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4850 uses advanced trench technology to provide VDS (V) = 75Vexcellent RDS(ON) and low gate charge. The two MOSFETs ID = 3.1A (VGS = 10V)may be used in H-bridge, Inverters and other applications. RDS(ON)

..2. Size:1062K kexin
ao4850.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4850 (KO4850)SOP-8 Unit:mm Features VDS (V) = 75V ID = 3.1A (VGS = 10V)1.50 0.15 RDS(ON) 130m (VGS = 10V) RDS(ON) 165m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol 10 Sec Steady State Unit Drain-Source Voltage VD

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ao4854.pdf

AO485430V Dual N-channel MOSFETGeneral Description Product SummaryVDS30VThe AO4854 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. The two MOSFETs ID (at VGS=10V) 8Amake a compact and efficient switch and synchronous RDS(ON) (at VGS=10V)

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ao4852.pdf

AO485260V Dual N-Channel MOSFETGeneral Description Product SummaryThe AO4852 uses advanced trench technology to VDS (V) = 60Vprovide excellent RDS(ON) and low gate charge. As a pairID = 3.5A (VGS = 10V)these MOSFETs operate very efficiently in Push PullRDS(ON)

9.3. Size:1262K kexin
ao4854.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4854 (KO4854)SOP-8 Unit:mm Features VDS (V) = 30V ID = 8A (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 23m (VGS = 4.5V)1 S2 5 D1 6 D12 G2 RDS(ON) 26m (VGS = 4V)7 D23 S1ESD Rating: 2KV HBM 8 D24 G1D1D2G1G2S1S2 Absolute Maximum Ratings Ta = 25Paramete

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ao4852.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4852 (KO4852)SOP-8 Unit:mm Features VDS (V) = 60V1.50 0.15 ID = 3.5A (VGS = 10V) RDS(ON) 90m (VGS = 10V) RDS(ON) 105m (VGS = 4.5V) 5 D1 1 S26 D12 G27 D23 S18 D24 G1D2D1G2G1S2S1 Absolute Maximum Ratings Ta = 25Parameter Symbol 10 Sec Steady State Unit Drain-Source Voltage

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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