AO4850 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AO4850Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4850 uses advanced trench technology to provide VDS (V) = 75Vexcellent RDS(ON) and low gate charge. The two MOSFETs ID = 3.1A (VGS = 10V)may be used in H-bridge, Inverters and other applications. RDS(ON)

SMD Type MOSFETDual N-Channel MOSFETAO4850 (KO4850)SOP-8 Unit:mm Features VDS (V) = 75V ID = 3.1A (VGS = 10V)1.50 0.15 RDS(ON) 130m (VGS = 10V) RDS(ON) 165m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol 10 Sec Steady State Unit Drain-Source Voltage VD

AO485430V Dual N-channel MOSFETGeneral Description Product SummaryVDS30VThe AO4854 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. The two MOSFETs ID (at VGS=10V) 8Amake a compact and efficient switch and synchronous RDS(ON) (at VGS=10V)

AO485260V Dual N-Channel MOSFETGeneral Description Product SummaryThe AO4852 uses advanced trench technology to VDS (V) = 60Vprovide excellent RDS(ON) and low gate charge. As a pairID = 3.5A (VGS = 10V)these MOSFETs operate very efficiently in Push PullRDS(ON)

SMD Type MOSFETDual N-Channel MOSFETAO4854 (KO4854)SOP-8 Unit:mm Features VDS (V) = 30V ID = 8A (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 23m (VGS = 4.5V)1 S2 5 D1 6 D12 G2 RDS(ON) 26m (VGS = 4V)7 D23 S1ESD Rating: 2KV HBM 8 D24 G1D1D2G1G2S1S2 Absolute Maximum Ratings Ta = 25Paramete

SMD Type MOSFETDual N-Channel MOSFETAO4852 (KO4852)SOP-8 Unit:mm Features VDS (V) = 60V1.50 0.15 ID = 3.5A (VGS = 10V) RDS(ON) 90m (VGS = 10V) RDS(ON) 105m (VGS = 4.5V) 5 D1 1 S26 D12 G27 D23 S18 D24 G1D2D1G2G1S2S1 Absolute Maximum Ratings Ta = 25Parameter Symbol 10 Sec Steady State Unit Drain-Source Voltage