AO4850 - описание и поиск аналогов

AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4850 uses advanced trench technology to provide VDS (V) = 75V excellent RDS(ON) and low gate charge. The two MOSFETs ID = 3.1A (VGS = 10V) may be used in H-bridge, Inverters and other applications. RDS(ON)

SMD Type MOSFET Dual N-Channel MOSFET AO4850 (KO4850) SOP-8 Unit mm Features VDS (V) = 75V ID = 3.1A (VGS = 10V) 1.50 0.15 RDS(ON) 130m (VGS = 10V) RDS(ON) 165m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 Sec Steady State Unit Drain-Source Voltage VD

AO4854 30V Dual N-channel MOSFET General Description Product Summary VDS 30V The AO4854 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs ID (at VGS=10V) 8A make a compact and efficient switch and synchronous RDS(ON) (at VGS=10V)

AO4852 60V Dual N-Channel MOSFET General Description Product Summary The AO4852 uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON) and low gate charge. As a pair ID = 3.5A (VGS = 10V) these MOSFETs operate very efficiently in Push Pull RDS(ON)

SMD Type MOSFET Dual N-Channel MOSFET AO4854 (KO4854) SOP-8 Unit mm Features VDS (V) = 30V ID = 8A (VGS = 10V) 1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 23m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 RDS(ON) 26m (VGS = 4V) 7 D2 3 S1 ESD Rating 2KV HBM 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Paramete

SMD Type MOSFET Dual N-Channel MOSFET AO4852 (KO4852) SOP-8 Unit mm Features VDS (V) = 60V 1.50 0.15 ID = 3.5A (VGS = 10V) RDS(ON) 90m (VGS = 10V) RDS(ON) 105m (VGS = 4.5V) 5 D1 1 S2 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D2 D1 G2 G1 S2 S1 Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 Sec Steady State Unit Drain-Source Voltage